是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | WAFER |
包装说明: | DIE, WAFER | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.02 |
风险等级: | 5.92 | 访问模式: | FOUR BANK PAGE BURST |
最长访问时间: | 6 ns | 其他特性: | AUTO/SELF REFRESH |
最大时钟频率 (fCLK): | 133 MHz | I/O 类型: | COMMON |
交错的突发长度: | 1,2,4,8 | JESD-30 代码: | X-XUUC-N |
内存密度: | 134217728 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 16 | 湿度敏感等级: | 1 |
功能数量: | 1 | 端口数量: | 1 |
字数: | 8388608 words | 字数代码: | 8000000 |
工作模式: | SYNCHRONOUS | 组织: | 8MX16 |
输出特性: | 3-STATE | 封装主体材料: | UNSPECIFIED |
封装代码: | DIE | 封装等效代码: | WAFER |
封装形状: | UNSPECIFIED | 封装形式: | UNCASED CHIP |
峰值回流温度(摄氏度): | 225 | 电源: | 1.8 V |
认证状态: | Not Qualified | 刷新周期: | 4096 |
自我刷新: | YES | 连续突发长度: | 1,2,4,8,FP |
最大待机电流: | 0.00001 A | 子类别: | DRAMs |
最大压摆率: | 0.08 mA | 最大供电电压 (Vsup): | 1.95 V |
最小供电电压 (Vsup): | 1.7 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
端子形式: | NO LEAD | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M65KA128AL | STMICROELECTRONICS |
获取价格 |
128Mbit (4 Banks x 2M x 16) 1.8V Supply, Low Power SDRAMs | |
M65KA128AL10W5 | STMICROELECTRONICS |
获取价格 |
128Mbit (4 Banks x 2M x 16) 1.8V Supply, Low Power SDRAMs | |
M65KA256AF8W8 | STMICROELECTRONICS |
获取价格 |
16MX16 SYNCHRONOUS DRAM, 6ns, UUC, WAFER | |
M65KA256AL10W8 | STMICROELECTRONICS |
获取价格 |
16MX16 SYNCHRONOUS DRAM, 7ns, UUC, WAFER | |
M65KA512AB | STMICROELECTRONICS |
获取价格 |
512Mbit (4 Banks x 8M x 16), 133 MHz Clock Rate, Bare Die, 1.8 V Supply, Low Power SDRAM | |
M65KA512AB83 | STMICROELECTRONICS |
获取价格 |
IC,SDRAM,4X8MX16,CMOS,DIE | |
M65KA512AB83T | STMICROELECTRONICS |
获取价格 |
32MX16 SYNCHRONOUS DRAM, 6ns, UUC, WAFER | |
M65KA512AB8W | STMICROELECTRONICS |
获取价格 |
32MX16 SYNCHRONOUS DRAM, 6ns, UUC, WAFER | |
M65KA512AB8W3 | STMICROELECTRONICS |
获取价格 |
512Mbit (4 Banks x 8M x 16), 133 MHz Clock Rate, Bare Die, 1.8 V Supply, Low Power SDRAM | |
M65KA512AB8W8 | STMICROELECTRONICS |
获取价格 |
32MX16 SYNCHRONOUS DRAM, 6ns, UUC, WAFER |