5秒后页面跳转
M65KA128AE8W5 PDF预览

M65KA128AE8W5

更新时间: 2024-11-23 21:20:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 时钟动态存储器内存集成电路
页数 文件大小 规格书
53页 457K
描述
8MX16 SYNCHRONOUS DRAM, 6ns, UUC, WAFER

M65KA128AE8W5 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:WAFER
包装说明:DIE, WAFERReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.92访问模式:FOUR BANK PAGE BURST
最长访问时间:6 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):133 MHzI/O 类型:COMMON
交错的突发长度:1,2,4,8JESD-30 代码:X-XUUC-N
内存密度:134217728 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:16湿度敏感等级:1
功能数量:1端口数量:1
字数:8388608 words字数代码:8000000
工作模式:SYNCHRONOUS组织:8MX16
输出特性:3-STATE封装主体材料:UNSPECIFIED
封装代码:DIE封装等效代码:WAFER
封装形状:UNSPECIFIED封装形式:UNCASED CHIP
峰值回流温度(摄氏度):225电源:1.8 V
认证状态:Not Qualified刷新周期:4096
自我刷新:YES连续突发长度:1,2,4,8,FP
最大待机电流:0.00001 A子类别:DRAMs
最大压摆率:0.08 mA最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

M65KA128AE8W5 数据手册

 浏览型号M65KA128AE8W5的Datasheet PDF文件第2页浏览型号M65KA128AE8W5的Datasheet PDF文件第3页浏览型号M65KA128AE8W5的Datasheet PDF文件第4页浏览型号M65KA128AE8W5的Datasheet PDF文件第5页浏览型号M65KA128AE8W5的Datasheet PDF文件第6页浏览型号M65KA128AE8W5的Datasheet PDF文件第7页 
M65KA128AE  
128 Mbit (4 Banks x 2 Mbit x 16)  
1.8 V Supply, Low Power SDRAM  
Features summary  
128 Mbit Synchronous Dynamic RAM  
– Organized as 4 Banks of 2 Mwords, each  
16 bits wide  
Synchronous Burst Read and Write  
– Fixed burst lengths: 1, 2, 4, 8 words or Full  
Page  
– Burst Types: Sequential and Interleaved.  
– Maximum Clock frequency: 133MHz  
– Clock Valid to Output Delay (CAS Latency):  
3 at maximum clock frequency  
– Burst Control by Burst Stop and Precharge  
Command  
Wafer  
Supply Voltage  
– V = V  
= 1.7 to 1.95V  
DDQ  
DD  
Automatic and controlled Precharge  
Byte control by LDQM and UDQM  
Low-power features:  
– Partial Array Self Refresh (PASR),  
– Automatic Temperature Compensated Self  
Refresh (TCSR)  
– Driver Strength (DS)  
– Deep Power-Down Mode  
Auto Refresh and Self Refresh  
LVCMOS Interface compatible with  
multiplexed addressing  
Operating temperature range  
25 to 90°C  
M65KA128AE IS ONLY AVAILABLE AS PART OF A MULTIPLE MEMORY PRODUCT  
November 2006  
Rev 2  
1/53  
www.st.com  
1

与M65KA128AE8W5相关器件

型号 品牌 获取价格 描述 数据表
M65KA128AL STMICROELECTRONICS

获取价格

128Mbit (4 Banks x 2M x 16) 1.8V Supply, Low Power SDRAMs
M65KA128AL10W5 STMICROELECTRONICS

获取价格

128Mbit (4 Banks x 2M x 16) 1.8V Supply, Low Power SDRAMs
M65KA256AF8W8 STMICROELECTRONICS

获取价格

16MX16 SYNCHRONOUS DRAM, 6ns, UUC, WAFER
M65KA256AL10W8 STMICROELECTRONICS

获取价格

16MX16 SYNCHRONOUS DRAM, 7ns, UUC, WAFER
M65KA512AB STMICROELECTRONICS

获取价格

512Mbit (4 Banks x 8M x 16), 133 MHz Clock Rate, Bare Die, 1.8 V Supply, Low Power SDRAM
M65KA512AB83 STMICROELECTRONICS

获取价格

IC,SDRAM,4X8MX16,CMOS,DIE
M65KA512AB83T STMICROELECTRONICS

获取价格

32MX16 SYNCHRONOUS DRAM, 6ns, UUC, WAFER
M65KA512AB8W STMICROELECTRONICS

获取价格

32MX16 SYNCHRONOUS DRAM, 6ns, UUC, WAFER
M65KA512AB8W3 STMICROELECTRONICS

获取价格

512Mbit (4 Banks x 8M x 16), 133 MHz Clock Rate, Bare Die, 1.8 V Supply, Low Power SDRAM
M65KA512AB8W8 STMICROELECTRONICS

获取价格

32MX16 SYNCHRONOUS DRAM, 6ns, UUC, WAFER