生命周期: | Obsolete | 零件包装代码: | WAFER |
包装说明: | DIE, WAFER | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.24 |
风险等级: | 5.84 | Is Samacsys: | N |
访问模式: | FOUR BANK PAGE BURST | 最长访问时间: | 6 ns |
其他特性: | AUTO/SELF REFRESH | 最大时钟频率 (fCLK): | 133 MHz |
I/O 类型: | COMMON | 交错的突发长度: | 2,4,8,16 |
JESD-30 代码: | X-XUUC-N | 内存密度: | 268435456 bit |
内存集成电路类型: | DDR DRAM | 内存宽度: | 16 |
功能数量: | 1 | 端口数量: | 1 |
字数: | 16777216 words | 字数代码: | 16000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -30 °C | 组织: | 16MX16 |
输出特性: | 3-STATE | 封装主体材料: | UNSPECIFIED |
封装代码: | DIE | 封装等效代码: | WAFER |
封装形状: | UNSPECIFIED | 封装形式: | UNCASED CHIP |
电源: | 1.8 V | 认证状态: | Not Qualified |
刷新周期: | 8192 | 自我刷新: | YES |
连续突发长度: | 2,4,8,16 | 最大待机电流: | 0.00001 A |
子类别: | DRAMs | 最大压摆率: | 0.13 mA |
最大供电电压 (Vsup): | 1.9 V | 最小供电电压 (Vsup): | 1.7 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子形式: | NO LEAD | 端子位置: | UPPER |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M65KG256AF8W6T | STMICROELECTRONICS |
获取价格 |
16MX16 DDR DRAM, 6ns, BGA149, TFBGA-149 | |
M65KG256AF8W8T | STMICROELECTRONICS |
获取价格 |
16MX16 DDR DRAM, 6ns, UUC, WAFER | |
M65KG512AA8W9 | STMICROELECTRONICS |
获取价格 |
32MX16 DDR DRAM, 6ns, UUC, WAFER | |
M65KG512AB | STMICROELECTRONICS |
获取价格 |
512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM | |
M65KG512AB6W8 | STMICROELECTRONICS |
获取价格 |
512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM | |
M65KG512AB6W9 | STMICROELECTRONICS |
获取价格 |
512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM | |
M65KG512AB85 | STMICROELECTRONICS |
获取价格 |
IC,SDRAM,DDR,4X8MX16,CMOS,WAFER | |
M65KG512AB8W8 | STMICROELECTRONICS |
获取价格 |
512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM | |
M65KG512AB8W9 | STMICROELECTRONICS |
获取价格 |
512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM | |
M66 | MICRO-ELECTRONICS |
获取价格 |
IMPLE MELODY GENERATOR |