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M5M54R01AJ-15 PDF预览

M5M54R01AJ-15

更新时间: 2024-11-28 22:16:39
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
6页 46K
描述
4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM

M5M54R01AJ-15 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOJ包装说明:SOJ, SOJ32,.44
针数:32Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92最长访问时间:15 ns
I/O 类型:SEPARATEJESD-30 代码:R-PDSO-J32
JESD-609代码:e0长度:20.95 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:1功能数量:1
端子数量:32字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:4MX1输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装等效代码:SOJ32,.44封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
认证状态:Not Qualified座面最大高度:3.55 mm
最大待机电流:0.01 A最小待机电流:3.14 V
子类别:SRAMs最大压摆率:0.16 mA
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

M5M54R01AJ-15 数据手册

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MITSUBISHI LSIs  
1998.11.30 Ver.B  
M5M54R01AJ-12,-15  
P RELIMINARY  
Notice: This is not a final specification.  
Some parametric limits are subject to change  
4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM  
DESCRIPTION  
PIN CONFIGURATION (TOP VIEW)  
The M5M54R01AJ is a family of 4194304-word by 1-bit  
static RAMs, fabricated with the high performance CMOS  
silicon gate process and designed for high speed  
application.  
A0  
A1  
A2  
A3  
A4  
A5  
S
VCC  
GND  
D
W
A6  
A7  
A8  
A9  
A10  
1
2
32 A21  
31 A20  
address  
inputs  
30  
address  
inputs  
3
4
5
A19  
29  
28  
27  
A18  
A17  
A16  
These devices operate on a single 3.3V supply, and are  
directly TTL compatible. They include a power down  
feature as well.  
6
7
8
chip select  
input  
output enable  
input  
(0V)  
26  
25  
24  
OE  
GND  
VCC  
(3.3V)  
(0V)  
FEATURES  
•Fast access time  
9
(3.3V)  
dataoutputs  
datainputs  
10  
23 Q  
22  
M5M54R01AJ-12 ... 12ns(max)  
M5M54R01AJ-15 ... 15ns(max)  
11  
12  
13  
A15  
write control  
input  
21  
A14  
A13  
A12  
address  
inputs  
•Single +3.3V power supply  
•Fully static operation : No clocks, No refresh  
•Easy memory expansion by S  
•Three-state outputs : OR-tie capability  
•OE prevents data contention in the I/O bus  
•Directly TTL compatible : All inputs and outputs  
20  
19  
address  
inputs  
14  
15  
16  
18 A11  
17  
byte control  
input  
B1/B4  
Outline 32P0K  
PACKAGE  
M5M54R01AJ  
APPLICATION  
High-speed memory units  
: 32pin 400mil SOJ  
BLOCK DIAGRAM  
A0  
1
2
A1  
A2  
3
A3  
A4  
A5  
4
MEMORY ARRAY  
1024 ROWS  
4096 COLUMNS  
data  
address  
inputs  
Q
outputs  
23  
5
6
A6  
A7  
12  
13  
A8  
A9  
14  
15  
COLUMN I/O CIRCUITS  
COLUMN ADDRESS  
DECODERS  
S
7
data  
inputs/  
D
10  
W
11  
8
VCC(3.3V)  
GND(0V)  
COLUMN INPUT BUFFERS  
24  
OE 26  
B1/B4 17  
9
25  
16 18  
29 30 31 32  
19 20 21 22 27 28  
A10 A11A12 A13A14 A15 A16 A17 A18 A19 A20 A21  
address inputs  
MITSUBISHI  
ELECTRIC  
1

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