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M58WR064T70ZB6T PDF预览

M58WR064T70ZB6T

更新时间: 2024-09-25 03:02:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
81页 497K
描述
64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory

M58WR064T70ZB6T 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:BGA包装说明:7.70 X 9 MM, 0.75 MM PITCH, VFBGA-56
针数:56Reach Compliance Code:not_compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.21最长访问时间:70 ns
启动块:TOP命令用户界面:YES
通用闪存接口:YES数据轮询:NO
JESD-30 代码:R-PBGA-B56JESD-609代码:e0
长度:9 mm内存密度:67108864 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:8,127
端子数量:56字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4MX16封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装等效代码:BGA56,7X8,30
封装形状:RECTANGULAR封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
页面大小:4 words并行/串行:PARALLEL
电源:1.8/2,1.8/3 V编程电压:1.8 V
认证状态:Not Qualified座面最大高度:1 mm
部门规模:4K,32K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.03 mA
最大供电电压 (Vsup):2.2 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn63Pb37)端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
切换位:NO类型:NOR TYPE
宽度:7.7 mmBase Number Matches:1

M58WR064T70ZB6T 数据手册

 浏览型号M58WR064T70ZB6T的Datasheet PDF文件第2页浏览型号M58WR064T70ZB6T的Datasheet PDF文件第3页浏览型号M58WR064T70ZB6T的Datasheet PDF文件第4页浏览型号M58WR064T70ZB6T的Datasheet PDF文件第5页浏览型号M58WR064T70ZB6T的Datasheet PDF文件第6页浏览型号M58WR064T70ZB6T的Datasheet PDF文件第7页 
M58WR064T  
M58WR064B  
64 Mbit (4Mb x 16, Multiple Bank, Burst )  
1.8V Supply Flash Memory  
PRODUCT PREVIEW  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
– V = 1.65V to 2.2V for Program, Erase and  
DD  
Read  
– V  
= 1.65V to 3.3V for I/O Buffers  
DDQ  
– V = 12V for fast Program (optional)  
PP  
SYNCHRONOUS / ASYNCHRONOUS READ  
– Synchronous Burst Read mode : 52MHz  
FBGA  
– Asynchronous/ Synchronous Page Read  
mode  
– Random Access: 70, 85, 100 ns  
PROGRAMMING TIME  
– 8µs by Word typical for Fast Factory Program  
– Double/Quadruple Word Program option  
– Enhanced Factory Program options  
MEMORY BLOCKS  
VFBGA56 (ZB)  
7.7 x 9 mm  
– Multiple Bank Memory Array: 4 Mbit Banks  
– Parameter Blocks (Top or Bottom location)  
DUAL OPERATIONS  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Program Erase in one Bank while Read in  
others  
– Top Device Code, M58WR064T: 8810h  
– Bottom Device Code, M58WR064B: 8811h  
– No delay between Read and Write operations  
BLOCK LOCKING  
– All blocks locked at Power up  
– Any combination of blocks can be locked  
– WP for Block Lock-Down  
SECURITY  
– 128 bit user programmable OTP cells  
– 64 bit unique device number  
– One parameter block permanently lockable  
COMMON FLASH INTERFACE (CFI)  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
April 2002  
1/81  
This is preliminary information on a new product now in development. Details are subject to change without notice.  

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