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M58WR128ET80ZB6T PDF预览

M58WR128ET80ZB6T

更新时间: 2024-11-12 22:31:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路
页数 文件大小 规格书
87页 1050K
描述
128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

M58WR128ET80ZB6T 技术参数

是否Rohs认证:不符合生命周期:Transferred
零件包装代码:BGA包装说明:12.50 X 12 MM, 0.75 MM PITCH, VFBGA-60
针数:60Reach Compliance Code:not_compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.58Is Samacsys:N
最长访问时间:80 ns其他特性:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
启动块:TOP命令用户界面:YES
通用闪存接口:YES数据轮询:NO
JESD-30 代码:R-PBGA-B60JESD-609代码:e0
长度:12.5 mm内存密度:134217728 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:8, 255
端子数量:60字数:8388608 words
字数代码:8000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:8MX16封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装等效代码:BGA60,9X10,30
封装形状:RECTANGULAR封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
页面大小:4 words并行/串行:PARALLEL
电源:1.8/2,1.8/3 V编程电压:1.8 V
认证状态:Not Qualified座面最大高度:1 mm
部门规模:4K,32K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.03 mA
最大供电电压 (Vsup):2.2 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn63Pb37)端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
切换位:NO类型:NOR TYPE
宽度:12 mmBase Number Matches:1

M58WR128ET80ZB6T 数据手册

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M58WR128ET  
M58WR128EB  
128 Mbit (8Mb x 16, Multiple Bank, Burst)  
1.8V Supply Flash Memory  
PRODUCT PREVIEW  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Package  
– V = 1.65V to 2.2V for Program, Erase and  
DD  
Read  
– V  
= 1.65V to 3.3V for I/O Buffers  
DDQ  
– V = 12V for fast Program (optional)  
PP  
SYNCHRONOUS / ASYNCHRONOUS READ  
– Synchronous Burst Read mode: 54MHz  
FBGA  
– Asynchronous/ Synchronous Page Read  
mode  
– Random Access: 70, 80, 100ns  
SYNCHRONOUS BURST READ SUSPEND  
PROGRAMMING TIME  
VFBGA60 (ZB)  
12.5 x 12mm  
– 8µs by Word typical for Fast Factory Program  
– Double/Quadruple Word Program option  
– Enhanced Factory Program options  
MEMORY BLOCKS  
– Multiple Bank Memory Array: 4 Mbit Banks  
– Parameter Blocks (Top or Bottom location)  
DUAL OPERATIONS  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Top Device Code, M58WR128ET: 881Eh  
– Bottom Device Code, M58WR128EB: 881Fh  
– Program Erase in one Bank while Read in  
others  
– No delay between Read and Write operations  
BLOCK LOCKING  
– All blocks locked at Power up  
– Any combination of blocks can be locked  
– WP for Block Lock-Down  
SECURITY  
– 128 bit user programmable OTP cells  
– 64 bit unique device number  
– One parameter block permanently lockable  
COMMON FLASH INTERFACE (CFI)  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
May 2003  
1/87  
This is preliminary information on a new product now in development. Details are subject to change without notice.  

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M58WR128FB70ZB6E STMICROELECTRONICS

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Flash, 8MX16, 70ns, PBGA56, 7.70 X 9 MM, 0.75 MM PITCH, LEAD FREE, VFBGA-56
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