Datasheet > M58WR128EB

M58WR128EB

更新时间： 2024-09-24 22:51:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
87页	1050K
描述
128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

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M58WR128EB 数据手册

M58WR128ET

M58WR128EB

128 Mbit (8Mb x 16, Multiple Bank, Burst)

1.8V Supply Flash Memory

PRODUCT PREVIEW

FEATURES SUMMARY

■ SUPPLY VOLTAGE

Figure 1. Package

– V = 1.65V to 2.2V for Program, Erase and

Read

– V

= 1.65V to 3.3V for I/O Buffers

DDQ

– V = 12V for fast Program (optional)

■ SYNCHRONOUS / ASYNCHRONOUS READ

– Synchronous Burst Read mode: 54MHz

FBGA

– Asynchronous/ Synchronous Page Read

mode

– Random Access: 70, 80, 100ns

■ SYNCHRONOUS BURST READ SUSPEND

■ PROGRAMMING TIME

VFBGA60 (ZB)

12.5 x 12mm

– 8µs by Word typical for Fast Factory Program

– Double/Quadruple Word Program option

– Enhanced Factory Program options

■ MEMORY BLOCKS

– Multiple Bank Memory Array: 4 Mbit Banks

– Parameter Blocks (Top or Bottom location)

■ DUAL OPERATIONS

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M58WR128ET: 881Eh

– Bottom Device Code, M58WR128EB: 881Fh

– Program Erase in one Bank while Read in

others

– No delay between Read and Write operations

■ BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WP for Block Lock-Down

■ SECURITY

– 128 bit user programmable OTP cells

– 64 bit unique device number

– One parameter block permanently lockable

■ COMMON FLASH INTERFACE (CFI)

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

May 2003

1/87

This is preliminary information on a new product now in development. Details are subject to change without notice.

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