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M470T6554CZ3-CLE7 PDF预览

M470T6554CZ3-CLE7

更新时间: 2024-11-10 21:55:03
品牌 Logo 应用领域
三星 - SAMSUNG 双倍数据速率
页数 文件大小 规格书
18页 329K
描述
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC

M470T6554CZ3-CLE7 数据手册

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256MB, 512MB, 1GB Unbuffered SODIMMs  
DDR2 SDRAM  
DDR2 Unbuffered SODIMM  
200pin Unbuffered SODIMM based on 512Mb C-die  
64bit Non-ECC  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL  
INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure couldresult in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 1.2 Aug. 2005  

与M470T6554CZ3-CLE7相关器件

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DDR DRAM Module, 64MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200
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DDR DRAM Module, 64MX64, 0.5ns, CMOS, ROHS COMPLIANT, SODIMM-200
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DDR DRAM Module, 64MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200
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DDR DRAM Module, 64MX64, 0.4ns, CMOS, ROHS COMPLIANT, SODIMM-200
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DDR DRAM Module, 64MX64, 0.4ns, CMOS, ROHS COMPLIANT, SODIMM-200
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DDR DRAM Module, 64MX64, 0.5ns, CMOS, ROHS COMPLIANT, SODIMM-200
M470T6554EZ3-LF7 SAMSUNG

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DDR DRAM Module, 64MX64, 0.4ns, CMOS, ROHS COMPLIANT, SODIMM-200
M470T6554IH3 SAMSUNG

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DDR2 SDRAM Memory