是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SODIMM | 包装说明: | DIMM, DIMM200,24 |
针数: | 200 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.36 |
风险等级: | 5.68 | Is Samacsys: | N |
访问模式: | DUAL BANK PAGE BURST | 最长访问时间: | 0.6 ns |
其他特性: | AUTO/SELF REFRESH | 最大时钟频率 (fCLK): | 200 MHz |
I/O 类型: | COMMON | JESD-30 代码: | R-XZMA-N200 |
内存密度: | 8589934592 bit | 内存集成电路类型: | DDR DRAM MODULE |
内存宽度: | 64 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 200 |
字数: | 134217728 words | 字数代码: | 128000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 95 °C |
最低工作温度: | 组织: | 128MX64 | |
输出特性: | 3-STATE | 封装主体材料: | UNSPECIFIED |
封装代码: | DIMM | 封装等效代码: | DIMM200,24 |
封装形状: | RECTANGULAR | 封装形式: | MICROELECTRONIC ASSEMBLY |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 1.8 V |
认证状态: | Not Qualified | 刷新周期: | 8192 |
自我刷新: | YES | 最大待机电流: | 0.128 A |
子类别: | DRAMs | 最大压摆率: | 2.04 mA |
最大供电电压 (Vsup): | 1.9 V | 最小供电电压 (Vsup): | 1.7 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | OTHER |
端子形式: | NO LEAD | 端子节距: | 0.6 mm |
端子位置: | ZIG-ZAG | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M470T2953CZ3-CD5 | SAMSUNG |
获取价格 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC | |
M470T2953CZ3-CE6 | SAMSUNG |
获取价格 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC | |
M470T2953CZ3-CE7 | SAMSUNG |
获取价格 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC | |
M470T2953CZ3-CLCC | SAMSUNG |
获取价格 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC | |
M470T2953CZ3-CLD5 | SAMSUNG |
获取价格 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC | |
M470T2953CZ3-CLE6 | SAMSUNG |
获取价格 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC | |
M470T2953CZ3-CLE7 | SAMSUNG |
获取价格 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC | |
M470T2953CZ3-LE6 | SAMSUNG |
获取价格 |
DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 | |
M470T2953EZ3-CCC | SAMSUNG |
获取价格 |
DDR DRAM Module, 128MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 | |
M470T2953EZ3-CD5 | SAMSUNG |
获取价格 |
DDR DRAM Module, 128MX64, 0.5ns, CMOS, ROHS COMPLIANT, SODIMM-200 |