5秒后页面跳转
M470T3354BZ3-LD5 PDF预览

M470T3354BZ3-LD5

更新时间: 2024-01-01 08:41:38
品牌 Logo 应用领域
三星 - SAMSUNG 时钟动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
19页 328K
描述
DDR DRAM Module, 32MX64, 0.5ns, CMOS, ROHS COMPLIANT, SODIMM-200

M470T3354BZ3-LD5 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SODIMM包装说明:DIMM, DIMM200,24
针数:200Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.36
风险等级:5.69访问模式:SINGLE BANK PAGE BURST
最长访问时间:0.5 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):267 MHzI/O 类型:COMMON
JESD-30 代码:R-XZMA-N200内存密度:2147483648 bit
内存集成电路类型:DDR DRAM MODULE内存宽度:64
湿度敏感等级:2功能数量:1
端口数量:1端子数量:200
字数:33554432 words字数代码:32000000
工作模式:SYNCHRONOUS最高工作温度:95 °C
最低工作温度:组织:32MX64
输出特性:3-STATE封装主体材料:UNSPECIFIED
封装代码:DIMM封装等效代码:DIMM200,24
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度):260电源:1.8 V
认证状态:Not Qualified刷新周期:8192
自我刷新:YES子类别:DRAMs
最大压摆率:0.96 mA最大供电电压 (Vsup):1.9 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:NO技术:CMOS
温度等级:OTHER端子形式:NO LEAD
端子节距:0.6 mm端子位置:ZIG-ZAG
处于峰值回流温度下的最长时间:40Base Number Matches:1

M470T3354BZ3-LD5 数据手册

 浏览型号M470T3354BZ3-LD5的Datasheet PDF文件第2页浏览型号M470T3354BZ3-LD5的Datasheet PDF文件第3页浏览型号M470T3354BZ3-LD5的Datasheet PDF文件第4页浏览型号M470T3354BZ3-LD5的Datasheet PDF文件第5页浏览型号M470T3354BZ3-LD5的Datasheet PDF文件第6页浏览型号M470T3354BZ3-LD5的Datasheet PDF文件第7页 
256MB, 512MB, 1GB Unbuffered SODIMMs  
DDR2 SDRAM  
DDR2 Unbuffered SODIMM  
200pin Unbuffered SODIMM based on 512Mb B-die  
64bit Non-ECC  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL  
INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure couldresult in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 1.5 Aug. 2005  

与M470T3354BZ3-LD5相关器件

型号 品牌 获取价格 描述 数据表
M470T3354BZ3-LD5/CC SAMSUNG

获取价格

200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC
M470T3354CZ0-CC SAMSUNG

获取价格

DDR2 Unbuffered SODIMM
M470T3354CZ0-CCC SAMSUNG

获取价格

DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
M470T3354CZ0-CD5 SAMSUNG

获取价格

DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
M470T3354CZ0-CD6 SAMSUNG

获取价格

DDR2 Unbuffered SODIMM
M470T3354CZ0-CE6 SAMSUNG

获取价格

DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
M470T3354CZ0-CE7 SAMSUNG

获取价格

DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
M470T3354CZ0-CF7 SAMSUNG

获取价格

DDR DRAM Module, 32MX64, 0.4ns, CMOS, ROHS COMPLIANT, SODIMM-200
M470T3354CZ0-CLCC SAMSUNG

获取价格

DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
M470T3354CZ0-CLD5 SAMSUNG

获取价格

DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC