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M45PE80-VMF6 PDF预览

M45PE80-VMF6

更新时间: 2024-11-21 04:38:31
品牌 Logo 应用领域
恒忆 - NUMONYX 可编程只读存储器光电二极管
页数 文件大小 规格书
36页 472K
描述
1MX8 FLASH 2.7V PROM, PDSO16, 0.300 INCH, PLASTIC, SO-16

M45PE80-VMF6 数据手册

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M45PE80  
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory  
With Byte-Alterability and a 25 MHz SPI Bus Interface  
FEATURES SUMMARY  
8Mbit of Page-Erasable Flash Memory  
Page Write (up to 256 Bytes) in 11ms (typical)  
Page Program (up to 256 Bytes) in 1.2ms  
(typical)  
Figure 1. Packages  
Page Erase (256 Bytes) in 10ms (typical)  
Sector Erase (512 Kbit)  
2.7 to 3.6V Single Supply Voltage  
SPI Bus Compatible Serial Interface  
25MHz Clock Rate (maximum)  
Deep Power-down Mode 1µA (typical)  
Electronic Signature  
VDFPN8 (MP)  
6x5mm (MLP8)  
JEDEC Standard Two-Byte Signature  
(4014h)  
More than 100,000 Write Cycles  
More than 20 Year Data Retention  
SO16 (MF)  
300 mil width  
May 2004  
1/36  

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8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz
M45PE80-VMF6P STMICROELECTRONICS

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8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz
M45PE80-VMF6P NUMONYX

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Flash, 1MX8, PDSO16, 0.300 INCH, LEAD FREE, PLASTIC, SO-16
M45PE80-VMF6TG STMICROELECTRONICS

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8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz
M45PE80-VMF6TP STMICROELECTRONICS

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8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz
M45PE80-VMF6TP NUMONYX

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Flash, 1MX8, PDSO16, 0.300 INCH, LEAD FREE, PLASTIC, SO-16
M45PE80-VMN6G STMICROELECTRONICS

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8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz
M45PE80-VMN6G NUMONYX

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8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz
M45PE80-VMN6P NUMONYX

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8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz
M45PE80-VMN6P STMICROELECTRONICS

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8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz