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M45PE80-VMN6G PDF预览

M45PE80-VMN6G

更新时间: 2024-11-24 03:51:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存内存集成电路光电二极管时钟
页数 文件大小 规格书
47页 374K
描述
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface

M45PE80-VMN6G 数据手册

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M45PE80  
8 Mbit, low voltage, Page-Erasable Serial Flash memory  
with byte alterability and a 50 MHz SPI bus interface  
Features  
SPI bus compatible serial interface  
50 MHz clock rate (maximum)  
2.7 V to 3.6 V single supply voltage  
8 Mbit of Page-Erasable Flash memory  
VFQFPN8 (MP)  
6 × 5 mm (MLP8)  
Page size: 256 bytes:  
– Page Write in 11 ms (typical)  
– Page Program in 0.8 ms (typical)  
– Page Erase in 10 ms (typical)  
Sector Erase (64 Kbytes)  
Hardware Write protection of the bottom sector  
(64 Kbytes)  
Electronic signature  
SO8W (MW)  
208 mils width  
– JEDEC standard two-byte signature  
(4014h)  
Deep Power-down mode 1 µA (typical)  
More than 100 000 Write cycles  
More than 20 years’ data retention  
Packages  
SO8N (MN)  
150 mils width  
– ECOPACK® (RoHS compliant)  
December 2006  
Rev 8  
1/47  
www.st.com  
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