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M45PE80-VMP6TG PDF预览

M45PE80-VMP6TG

更新时间: 2024-11-24 03:51:07
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存
页数 文件大小 规格书
47页 913K
描述
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface

M45PE80-VMP6TG 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOIC包装说明:VSON, SOLCC8,.25
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.55最大时钟频率 (fCLK):50 MHz
数据保留时间-最小值:20耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-XDSO-N8长度:6 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:8字数:1048576 words
字数代码:1000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX8封装主体材料:UNSPECIFIED
封装代码:VSON封装等效代码:SOLCC8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified座面最大高度:1 mm
串行总线类型:SPI最大待机电流:0.00001 A
子类别:Flash Memories最大压摆率:0.015 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:NO LEAD端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NOR TYPE宽度:5 mm
写保护:HARDWARE/SOFTWARE

M45PE80-VMP6TG 数据手册

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M45PE80  
8 Mbit, low voltage, Page-Erasable Serial Flash memory  
with byte alterability and a 50 MHz SPI bus interface  
Features  
SPI bus compatible serial interface  
50 MHz clock rate (maximum)  
2.7 V to 3.6 V single supply voltage  
8 Mbit of Page-Erasable Flash memory  
VFQFPN8 (MP)  
6 × 5 mm (MLP8)  
Page size: 256 bytes:  
– Page Write in 11 ms (typical)  
– Page Program in 0.8 ms (typical)  
– Page Erase in 10 ms (typical)  
Sector Erase (64 Kbytes)  
Hardware Write protection of the bottom sector  
(64 Kbytes)  
Electronic signature  
SO8W (MW)  
208 mils width  
– JEDEC standard two-byte signature  
(4014h)  
Deep Power-down mode 1 µA (typical)  
More than 100 000 Write cycles  
More than 20 years’ data retention  
Packages  
SO8N (MN)  
150 mils width  
– ECOPACK® (RoHS compliant)  
December 2007  
Rev 9  
1/47  
www.numonyx.com  
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