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M45PE80-VMF6G PDF预览

M45PE80-VMF6G

更新时间: 2024-11-23 22:46:43
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意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
36页 475K
描述
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

M45PE80-VMF6G 数据手册

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M45PE80  
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory  
With Byte-Alterability and a 25 MHz SPI Bus Interface  
FEATURES SUMMARY  
8Mbit of Page-Erasable Flash Memory  
Page Write (up to 256 Bytes) in 11ms (typical)  
Page Program (up to 256 Bytes) in 1.2ms  
(typical)  
Figure 1. Packages  
Page Erase (256 Bytes) in 10ms (typical)  
Sector Erase (512 Kbit)  
2.7 to 3.6V Single Supply Voltage  
SPI Bus Compatible Serial Interface  
25MHz Clock Rate (maximum)  
Deep Power-down Mode 1µA (typical)  
Electronic Signature  
VDFPN8 (MP)  
6x5mm (MLP8)  
JEDEC Standard Two-Byte Signature  
(4014h)  
More than 100,000 Write Cycles  
More than 20 Year Data Retention  
SO16 (MF)  
300 mil width  
May 2004  
1/36  

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M45PE80-VMN6P MICRON

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