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M45PE80-VMF6P PDF预览

M45PE80-VMF6P

更新时间: 2024-11-20 20:28:55
品牌 Logo 应用领域
恒忆 - NUMONYX 时钟光电二极管内存集成电路
页数 文件大小 规格书
36页 472K
描述
Flash, 1MX8, PDSO16, 0.300 INCH, LEAD FREE, PLASTIC, SO-16

M45PE80-VMF6P 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP,
针数:16Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.57最大时钟频率 (fCLK):25 MHz
JESD-30 代码:R-PDSO-G16JESD-609代码:e4
长度:10.3 mm内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:16
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:2.65 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NOR TYPE宽度:7.5 mm
Base Number Matches:1

M45PE80-VMF6P 数据手册

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M45PE80  
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory  
With Byte-Alterability and a 25 MHz SPI Bus Interface  
FEATURES SUMMARY  
8Mbit of Page-Erasable Flash Memory  
Page Write (up to 256 Bytes) in 11ms (typical)  
Page Program (up to 256 Bytes) in 1.2ms  
(typical)  
Figure 1. Packages  
Page Erase (256 Bytes) in 10ms (typical)  
Sector Erase (512 Kbit)  
2.7 to 3.6V Single Supply Voltage  
SPI Bus Compatible Serial Interface  
25MHz Clock Rate (maximum)  
Deep Power-down Mode 1µA (typical)  
Electronic Signature  
VDFPN8 (MP)  
6x5mm (MLP8)  
JEDEC Standard Two-Byte Signature  
(4014h)  
More than 100,000 Write Cycles  
More than 20 Year Data Retention  
SO16 (MF)  
300 mil width  
May 2004  
1/36  

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