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M45PE80-VMN6G PDF预览

M45PE80-VMN6G

更新时间: 2024-11-20 03:51:07
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存存储内存集成电路光电二极管时钟
页数 文件大小 规格书
47页 913K
描述
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface

M45PE80-VMN6G 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOIC包装说明:0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.7Is Samacsys:N
最大时钟频率 (fCLK):50 MHz数据保留时间-最小值:20
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
长度:4.9 mm内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:8
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:1.75 mm串行总线类型:SPI
最大待机电流:0.00001 A子类别:Flash Memories
最大压摆率:0.015 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED类型:NOR TYPE
宽度:3.9 mm写保护:HARDWARE/SOFTWARE
Base Number Matches:1

M45PE80-VMN6G 数据手册

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M45PE80  
8 Mbit, low voltage, Page-Erasable Serial Flash memory  
with byte alterability and a 50 MHz SPI bus interface  
Features  
SPI bus compatible serial interface  
50 MHz clock rate (maximum)  
2.7 V to 3.6 V single supply voltage  
8 Mbit of Page-Erasable Flash memory  
VFQFPN8 (MP)  
6 × 5 mm (MLP8)  
Page size: 256 bytes:  
– Page Write in 11 ms (typical)  
– Page Program in 0.8 ms (typical)  
– Page Erase in 10 ms (typical)  
Sector Erase (64 Kbytes)  
Hardware Write protection of the bottom sector  
(64 Kbytes)  
Electronic signature  
SO8W (MW)  
208 mils width  
– JEDEC standard two-byte signature  
(4014h)  
Deep Power-down mode 1 µA (typical)  
More than 100 000 Write cycles  
More than 20 years’ data retention  
Packages  
SO8N (MN)  
150 mils width  
– ECOPACK® (RoHS compliant)  
December 2007  
Rev 9  
1/47  
www.numonyx.com  
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