Datasheet > M36W416TGZA

M36W416TGZA

更新时间： 2024-11-19 22:19:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存静态存储器
页数	文件大小	规格书
62页	435K
描述
16 Mbit 1Mb x16, Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM, Multiple Memory Product

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M36W416TGZA 数据手册

M36W416TG

M36W416BG

16 Mbit (1Mb x16, Boot Block) Flash Memory

and 4Mbit (256Kb x16) SRAM, Multiple Memory Product

PRELIMINARY DATA

FEATURES SUMMARY

■ MULTIPLE MEMORY PRODUCT

SRAM

■ 4 Mbit (256Kb x 16)

– 16 Mbit (1Mb x 16) Boot Block Flash Memory

– 4 Mbit (256Kb x 16) SRAM

■ ACCESS TIME: 70ns

■ SUPPLY VOLTAGE

■ LOW V

DATA RETENTION: 1.5V

DDS

– V

= V

= 2.7V to 3.3V

DDF

DDQF

DDS

■ POWER DOWN FEATURES USING TWO

CHIP ENABLE INPUTS

= V

= 2.7V to 3.3V

DDS

= 12V for Fast Program (optional)

PPF

Figure 1. Packages

■ ACCESS TIME: 70ns, 85ns

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36W416TG: 88CEh

– Bottom Device Code, M36W416BG: 88CFh

FBGA

FLASH MEMORY

■ MEMORY BLOCKS

– Parameter Blocks (Top or Bottom location)

– Main Blocks

Stacked LFBGA66 (ZA)

12 x 8mm

■ PROGRAMMING TIME

– 10µs typical

– Double Word Programming Option

■ BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WP for Block Lock-Down

■ AUTOMATIC STAND-BY MODE

■ PROGRAM and ERASE SUSPEND

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ SECURITY

– 64 bit user programmable OTP cells

– 64 bit unique device identifier

– One parameter block permanently lockable

November 2002

1/62

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6 7...62

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M36W432B70ZA6	STMICROELECTRONICS	获取价格	暂无描述
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M36W432B85ZA1	STMICROELECTRONICS	获取价格	IC,MIXED MEMORY,FLASH+SRAM,CMOS,BGA,66PIN,PLASTIC