M36W432B70ZA6T

更新时间： 2024-11-19 22:11:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存内存集成电路静态存储器
页数	文件大小	规格书
57页	418K
描述
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

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M36W432B70ZA6T 数据手册

M36W432T

M36W432B

32 Mbit (2Mb x16, Boot Block) Flash Memory

and 4 Mbit (256K x16) SRAM, Multiple Memory Product

PRODUCT PREVIEW

FEATURES SUMMARY

■ SUPPLY VOLTAGE

SRAM

■ 4 Mbit (256K x 16 bit)

■ ACCESS TIME: 70ns

– V

= 2.7V to 3.3V

DDF

DDS

PPF

= V

= 2.7V to 3.3V

DDQF

■ LOW V

DATA RETENTION: 1.5V

DDS

= 12V for Fast Program (optional)

■ POWER DOWN FEATURES USING TWO

■ ACCESS TIME: 70,85ns

CHIP ENABLE INPUTS

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

Figure 1. Packages

– Manufacturer Code: 20h

– Top Device Code, M36W432T: 88BAh

– Bottom Device Code, M36W432B: 88BBh

FLASH MEMORY

■ 32 Mbit (2Mb x16) BOOT BLOCK

FBGA

– 8 x 4 KWord Parameter Blocks (Top or

Bottom Location)

■ PROGRAMMING TIME

– 10µs typical

Stacked LFBGA66 (ZA)

8 x 8 ball array

– Double Word Programming Option

■ BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WPF for Block Lock-Down

■ AUTOMATIC STAND-BY MODE

■ PROGRAM and ERASE SUSPEND

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ SECURITY

– 64 bit user programmable OTP cells

– 64 bit unique device identifier

– One parameter block permanently lockable

February 2002

1/57

This is preliminary information on a new product now in development. Details are subject to change without notice.

12 3 4 5 6 7...57

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