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M36W432BZA PDF预览

M36W432BZA

更新时间: 2024-11-19 22:14:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存静态存储器
页数 文件大小 规格书
57页 418K
描述
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

M36W432BZA 数据手册

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M36W432T  
M36W432B  
32 Mbit (2Mb x16, Boot Block) Flash Memory  
and 4 Mbit (256K x16) SRAM, Multiple Memory Product  
PRODUCT PREVIEW  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
SRAM  
4 Mbit (256K x 16 bit)  
ACCESS TIME: 70ns  
– V  
– V  
– V  
= 2.7V to 3.3V  
DDF  
DDS  
PPF  
= V  
= 2.7V to 3.3V  
DDQF  
LOW V  
DATA RETENTION: 1.5V  
DDS  
= 12V for Fast Program (optional)  
POWER DOWN FEATURES USING TWO  
ACCESS TIME: 70,85ns  
CHIP ENABLE INPUTS  
LOW POWER CONSUMPTION  
ELECTRONIC SIGNATURE  
Figure 1. Packages  
– Manufacturer Code: 20h  
– Top Device Code, M36W432T: 88BAh  
– Bottom Device Code, M36W432B: 88BBh  
FLASH MEMORY  
32 Mbit (2Mb x16) BOOT BLOCK  
FBGA  
– 8 x 4 KWord Parameter Blocks (Top or  
Bottom Location)  
PROGRAMMING TIME  
– 10µs typical  
Stacked LFBGA66 (ZA)  
8 x 8 ball array  
– Double Word Programming Option  
BLOCK LOCKING  
– All blocks locked at Power up  
– Any combination of blocks can be locked  
– WPF for Block Lock-Down  
AUTOMATIC STAND-BY MODE  
PROGRAM and ERASE SUSPEND  
COMMON FLASH INTERFACE  
– 64 bit Security Code  
SECURITY  
– 64 bit user programmable OTP cells  
– 64 bit unique device identifier  
– One parameter block permanently lockable  
February 2002  
1/57  
This is preliminary information on a new product now in development. Details are subject to change without notice.  

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