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M36W432BG PDF预览

M36W432BG

更新时间: 2024-11-19 22:14:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存静态存储器
页数 文件大小 规格书
66页 439K
描述
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

M36W432BG 数据手册

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M36W432TG  
M36W432BG  
32 Mbit (2Mb x16, Boot Block) Flash Memory  
and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product  
PRELIMINARY DATA  
FEATURES SUMMARY  
MULTIPLE MEMORY PRODUCT  
SRAM  
4 Mbit (256Kb x 16)  
– 32 Mbit (2Mb x 16), Boot Block, Flash Memory  
– 4 Mbit (256Kb x 16) SRAM Memory  
SUPPLY VOLTAGE  
ACCESS TIME: 70ns  
LOW V  
DATA RETENTION: 1.5V  
DDS  
– V  
– V  
– V  
= 2.7V to 3.3V  
DDF  
DDS  
PPF  
POWER DOWN FEATURES USING TWO  
CHIP ENABLE INPUTS  
= V  
= 2.7V to 3.3V  
DDQF  
= 12V for Fast Program (optional)  
Figure 1. Package  
ACCESS TIME: 70ns, 85ns  
LOW POWER CONSUMPTION  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Top Device Code, M36W432TG: 88BAh  
– Bottom Device Code, M36W432BG: 88BBh  
FBGA  
FLASH MEMORY  
MEMORY BLOCKS  
– Parameter Blocks (Top or Bottom Location)  
– Main Blocks  
Stacked LFBGA66 (ZA)  
12 x 8 mm  
PROGRAMMING TIME  
– 10µs typical  
– Double Word Programming Option  
– Quadruple Word Programming Option  
BLOCK LOCKING  
– All blocks locked at Power up  
– Any combination of blocks can be locked  
– WP for Block Lock-Down  
F
AUTOMATIC STANDBY MODE  
PROGRAM and ERASE SUSPEND  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
COMMON FLASH INTERFACE  
SECURITY  
– 128 bit user programmable OTP cells  
– 64 bit unique device identifier  
November 2002  
1/66  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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