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M36W432T70ZA1 PDF预览

M36W432T70ZA1

更新时间: 2024-10-01 06:56:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器内存集成电路
页数 文件大小 规格书
57页 352K
描述
IC,MIXED MEMORY,FLASH+SRAM,CMOS,BGA,66PIN,PLASTIC

M36W432T70ZA1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.84
最长访问时间:70 nsJESD-30 代码:R-PBGA-B66
JESD-609代码:e1内存集成电路类型:MEMORY CIRCUIT
混合内存类型:FLASH+SRAM端子数量:66
最高工作温度:70 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:FBGA
封装等效代码:BGA66,8X12,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, FINE PITCH电源:3 V
认证状态:Not Qualified子类别:Other Memory ICs
最大压摆率:0.02 mA标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM

M36W432T70ZA1 数据手册

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M36W432T  
M36W432B  
32 Mbit (2Mb x16, Boot Block) Flash Memory  
and 4 Mbit (256K x16) SRAM, Multiple Memory Product  
PRODUCT PREVIEW  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
SRAM  
4 Mbit (256K x 16 bit)  
ACCESS TIME: 70ns  
– V  
– V  
– V  
= 2.7V to 3.3V  
DDF  
DDS  
PPF  
= V  
= 2.7V to 3.3V  
DDQF  
LOW V  
DATA RETENTION: 1.5V  
DDS  
= 12V for Fast Program (optional)  
POWER DOWN FEATURES USING TWO  
ACCESS TIME: 70,85ns  
CHIP ENABLE INPUTS  
LOW POWER CONSUMPTION  
ELECTRONIC SIGNATURE  
Figure 1. Packages  
– Manufacturer Code: 20h  
– Top Device Code, M36W432T: 88BAh  
– Bottom Device Code, M36W432B: 88BBh  
FLASH MEMORY  
32 Mbit (2Mb x16) BOOT BLOCK  
FBGA  
– 8 x 4 KWord Parameter Blocks (Top or  
Bottom Location)  
PROGRAMMING TIME  
– 10µs typical  
Stacked LFBGA66 (ZA)  
8 x 8 ball array  
– Double Word Programming Option  
BLOCK LOCKING  
– All blocks locked at Power up  
– Any combination of blocks can be locked  
– WPF for Block Lock-Down  
AUTOMATIC STAND-BY MODE  
PROGRAM and ERASE SUSPEND  
COMMON FLASH INTERFACE  
– 64 bit Security Code  
SECURITY  
– 64 bit user programmable OTP cells  
– 64 bit unique device identifier  
– One parameter block permanently lockable  
February 2002  
1/57  
This is preliminary information on a new product now in development. Details are subject to change without notice.  

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