是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最长访问时间: | 70 ns | JESD-30 代码: | R-PBGA-B66 |
JESD-609代码: | e1 | 内存集成电路类型: | MEMORY CIRCUIT |
混合内存类型: | FLASH+SRAM | 端子数量: | 66 |
最高工作温度: | 70 °C | 最低工作温度: | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | FBGA |
封装等效代码: | BGA66,8X12,32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, FINE PITCH | 电源: | 3 V |
认证状态: | Not Qualified | 子类别: | Other Memory ICs |
最大压摆率: | 0.02 mA | 标称供电电压 (Vsup): | 3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5) |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M36W432T70ZA1T | STMICROELECTRONICS |
获取价格 |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product | |
M36W432T70ZA6T | STMICROELECTRONICS |
获取价格 |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product | |
M36W432T70ZA6T | NUMONYX |
获取价格 |
Memory Circuit, 2MX16, CMOS, PBGA66, 0.80 MM PITCH, STACK, LFBGA-66 | |
M36W432T85ZA1T | STMICROELECTRONICS |
获取价格 |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product | |
M36W432T85ZA1T | NUMONYX |
获取价格 |
Memory Circuit, 2MX16, CMOS, PBGA66, 0.80 MM PITCH, STACK, LFBGA-66 | |
M36W432T85ZA6 | STMICROELECTRONICS |
获取价格 |
IC,MIXED MEMORY,FLASH+SRAM,CMOS,BGA,66PIN,PLASTIC | |
M36W432T85ZA6T | STMICROELECTRONICS |
获取价格 |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product | |
M36W432TG | STMICROELECTRONICS |
获取价格 |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Produc | |
M36W432TG70ZA1 | STMICROELECTRONICS |
获取价格 |
SPECIALTY MEMORY CIRCUIT, PBGA66, 12 X 8 MM, 0.80 MM PITCH, LFBGA-66 | |
M36W432TG70ZA1T | STMICROELECTRONICS |
获取价格 |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Produc |