Datasheet > M36W432TGZA

M36W432TGZA

更新时间： 2024-02-04 13:13:21

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存静态存储器
页数	文件大小	规格书
66页	439K
描述
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

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数据手册

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M36W432TGZA 数据手册

M36W432TG

M36W432BG

32 Mbit (2Mb x16, Boot Block) Flash Memory

and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product

PRELIMINARY DATA

FEATURES SUMMARY

■ MULTIPLE MEMORY PRODUCT

SRAM

■ 4 Mbit (256Kb x 16)

– 32 Mbit (2Mb x 16), Boot Block, Flash Memory

– 4 Mbit (256Kb x 16) SRAM Memory

■ SUPPLY VOLTAGE

■ ACCESS TIME: 70ns

■ LOW V

DATA RETENTION: 1.5V

DDS

– V

= 2.7V to 3.3V

DDF

DDS

PPF

■ POWER DOWN FEATURES USING TWO

CHIP ENABLE INPUTS

= V

= 2.7V to 3.3V

DDQF

= 12V for Fast Program (optional)

Figure 1. Package

■ ACCESS TIME: 70ns, 85ns

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36W432TG: 88BAh

– Bottom Device Code, M36W432BG: 88BBh

FBGA

FLASH MEMORY

■ MEMORY BLOCKS

– Parameter Blocks (Top or Bottom Location)

– Main Blocks

Stacked LFBGA66 (ZA)

12 x 8 mm

■ PROGRAMMING TIME

– 10µs typical

– Double Word Programming Option

– Quadruple Word Programming Option

■ BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WP for Block Lock-Down

■ AUTOMATIC STANDBY MODE

■ PROGRAM and ERASE SUSPEND

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ COMMON FLASH INTERFACE

■ SECURITY

– 128 bit user programmable OTP cells

– 64 bit unique device identifier

November 2002

1/66

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6 7...66

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