5秒后页面跳转
M36W432B70ZA6T PDF预览

M36W432B70ZA6T

更新时间: 2024-09-29 20:21:07
品牌 Logo 应用领域
恒忆 - NUMONYX 内存集成电路
页数 文件大小 规格书
57页 418K
描述
Memory Circuit, 2MX16, CMOS, PBGA66, 0.80 MM PITCH, STACK, LFBGA-66

M36W432B70ZA6T 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:LFBGA,针数:66
Reach Compliance Code:unknownHTS代码:8542.32.00.71
风险等级:5.12其他特性:STATIC RAM IS ORGANIZED AS 256K X 16
JESD-30 代码:R-PBGA-B66JESD-609代码:e0
长度:12 mm内存密度:33554432 bit
内存集成电路类型:MEMORY CIRCUIT内存宽度:16
功能数量:1端子数量:66
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX16
封装主体材料:PLASTIC/EPOXY封装代码:LFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.4 mm最大供电电压 (Vsup):3.3 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:8 mmBase Number Matches:1

M36W432B70ZA6T 数据手册

 浏览型号M36W432B70ZA6T的Datasheet PDF文件第2页浏览型号M36W432B70ZA6T的Datasheet PDF文件第3页浏览型号M36W432B70ZA6T的Datasheet PDF文件第4页浏览型号M36W432B70ZA6T的Datasheet PDF文件第5页浏览型号M36W432B70ZA6T的Datasheet PDF文件第6页浏览型号M36W432B70ZA6T的Datasheet PDF文件第7页 
M36W432T  
M36W432B  
32 Mbit (2Mb x16, Boot Block) Flash Memory  
and 4 Mbit (256K x16) SRAM, Multiple Memory Product  
PRODUCT PREVIEW  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
SRAM  
4 Mbit (256K x 16 bit)  
ACCESS TIME: 70ns  
– V  
– V  
– V  
= 2.7V to 3.3V  
DDF  
DDS  
PPF  
= V  
= 2.7V to 3.3V  
DDQF  
LOW V  
DATA RETENTION: 1.5V  
DDS  
= 12V for Fast Program (optional)  
POWER DOWN FEATURES USING TWO  
ACCESS TIME: 70,85ns  
CHIP ENABLE INPUTS  
LOW POWER CONSUMPTION  
ELECTRONIC SIGNATURE  
Figure 1. Packages  
– Manufacturer Code: 20h  
– Top Device Code, M36W432T: 88BAh  
– Bottom Device Code, M36W432B: 88BBh  
FLASH MEMORY  
32 Mbit (2Mb x16) BOOT BLOCK  
FBGA  
– 8 x 4 KWord Parameter Blocks (Top or  
Bottom Location)  
PROGRAMMING TIME  
– 10µs typical  
Stacked LFBGA66 (ZA)  
8 x 8 ball array  
– Double Word Programming Option  
BLOCK LOCKING  
– All blocks locked at Power up  
– Any combination of blocks can be locked  
– WPF for Block Lock-Down  
AUTOMATIC STAND-BY MODE  
PROGRAM and ERASE SUSPEND  
COMMON FLASH INTERFACE  
– 64 bit Security Code  
SECURITY  
– 64 bit user programmable OTP cells  
– 64 bit unique device identifier  
– One parameter block permanently lockable  
February 2002  
1/57  
This is preliminary information on a new product now in development. Details are subject to change without notice.  

与M36W432B70ZA6T相关器件

型号 品牌 获取价格 描述 数据表
M36W432B85ZA1 STMICROELECTRONICS

获取价格

IC,MIXED MEMORY,FLASH+SRAM,CMOS,BGA,66PIN,PLASTIC
M36W432B85ZA1T STMICROELECTRONICS

获取价格

32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36W432B85ZA6 STMICROELECTRONICS

获取价格

暂无描述
M36W432B85ZA6T STMICROELECTRONICS

获取价格

32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36W432BG STMICROELECTRONICS

获取价格

32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Produc
M36W432BG70ZA1 STMICROELECTRONICS

获取价格

SPECIALTY MEMORY CIRCUIT, PBGA66, 12 X 8 MM, 0.80 MM PITCH, LFBGA-66
M36W432BG70ZA1T STMICROELECTRONICS

获取价格

32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Produc
M36W432BG70ZA6 STMICROELECTRONICS

获取价格

SPECIALTY MEMORY CIRCUIT, PBGA66, 12 X 8 MM, 0.80 MM PITCH, LFBGA-66
M36W432BG70ZA6T STMICROELECTRONICS

获取价格

32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Produc
M36W432BG85ZA1T STMICROELECTRONICS

获取价格

32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Produc