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M29W512B55K1T PDF预览

M29W512B55K1T

更新时间: 2024-02-03 05:09:10
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存内存集成电路
页数 文件大小 规格书
18页 141K
描述
512 Kbit 64Kb x8, Bulk Low Voltage Single Supply Flash Memory

M29W512B55K1T 数据手册

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M29W512B  
512 Kbit (64Kb x8, Bulk)  
Low Voltage Single Supply Flash Memory  
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 55ns  
PROGRAMMING TIME  
– 10µs per Byte typical  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithm  
– Embedded Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
TSOP32 (NZ)  
8 x 14mm  
PLCC32 (K)  
Figure 1. Logic Diagram  
– Manufacturer Code: 20h  
– Device Code: 27h  
V
CC  
16  
8
A0-A15  
DQ0-DQ7  
W
E
M29W512B  
G
V
SS  
AI02743  
March 2000  
1/18  

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