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M29W512B55NZ1 PDF预览

M29W512B55NZ1

更新时间: 2024-01-30 21:29:49
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
18页 141K
描述
64KX8 FLASH 3V PROM, 55ns, PDSO32, 8 X 14 MM, PLASTIC, TSOP-32

M29W512B55NZ1 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:TSOP包装说明:8 X 14 MM, PLASTIC, TSOP-32
针数:32Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.69最长访问时间:55 ns
命令用户界面:YES数据轮询:YES
JESD-30 代码:R-PDSO-G32JESD-609代码:e0
长度:12.4 mm内存密度:524288 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:32
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP32,.56,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
电源:3.3 V编程电压:3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL切换位:YES
类型:NOR TYPE宽度:8 mm
Base Number Matches:1

M29W512B55NZ1 数据手册

 浏览型号M29W512B55NZ1的Datasheet PDF文件第2页浏览型号M29W512B55NZ1的Datasheet PDF文件第3页浏览型号M29W512B55NZ1的Datasheet PDF文件第4页浏览型号M29W512B55NZ1的Datasheet PDF文件第5页浏览型号M29W512B55NZ1的Datasheet PDF文件第6页浏览型号M29W512B55NZ1的Datasheet PDF文件第7页 
M29W512B  
512 Kbit (64Kb x8, Bulk)  
Low Voltage Single Supply Flash Memory  
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 55ns  
PROGRAMMING TIME  
– 10µs per Byte typical  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithm  
– Embedded Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
TSOP32 (NZ)  
8 x 14mm  
PLCC32 (K)  
Figure 1. Logic Diagram  
– Manufacturer Code: 20h  
– Device Code: 27h  
V
CC  
16  
8
A0-A15  
DQ0-DQ7  
W
E
M29W512B  
G
V
SS  
AI02743  
March 2000  
1/18  

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