是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | QFJ | 包装说明: | PLASTIC, LCC-32 |
针数: | 32 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.51 |
风险等级: | 5.55 | 最长访问时间: | 70 ns |
JESD-30 代码: | R-PQCC-J32 | JESD-609代码: | e0 |
长度: | 13.995 mm | 内存密度: | 524288 bit |
内存集成电路类型: | FLASH | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 32 |
字数: | 65536 words | 字数代码: | 64000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 64KX8 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | QCCJ |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
并行/串行: | PARALLEL | 编程电压: | 2.7 V |
认证状态: | Not Qualified | 座面最大高度: | 3.56 mm |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | J BEND |
端子节距: | 1.27 mm | 端子位置: | QUAD |
类型: | NOR TYPE | 宽度: | 11.455 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M29W512B70K1T | STMICROELECTRONICS |
获取价格 |
512 Kbit 64Kb x8, Bulk Low Voltage Single Supply Flash Memory |
![]() |
M29W512B70NZ1 | STMICROELECTRONICS |
获取价格 |
64KX8 FLASH 2.7V PROM, 70ns, PDSO32, 8 X 14 MM, PLASTIC, TSOP-32 |
![]() |
M29W512B70NZ1T | STMICROELECTRONICS |
获取价格 |
512 Kbit 64Kb x8, Bulk Low Voltage Single Supply Flash Memory |
![]() |
M29W512B90K1T | STMICROELECTRONICS |
获取价格 |
512 Kbit 64Kb x8, Bulk Low Voltage Single Supply Flash Memory |
![]() |
M29W512B90NZ1 | STMICROELECTRONICS |
获取价格 |
64KX8 FLASH 2.7V PROM, 90ns, PDSO32, 8 X 14 MM, PLASTIC, TSOP-32 |
![]() |
M29W512B90NZ1T | STMICROELECTRONICS |
获取价格 |
512 Kbit 64Kb x8, Bulk Low Voltage Single Supply Flash Memory |
![]() |
M29W512GH70N3E | MICRON |
获取价格 |
Parallel NOR Flash Embedded Memory – Automoti |
![]() |
M29W512GH7AN6E | MICRON |
获取价格 |
Parallel NOR Flash Embedded Memory – Automoti |
![]() |
M29W640D | STMICROELECTRONICS |
获取价格 |
FLASH NOR HIGH DENSITY & CONSUMER |
![]() |
M29W640DB | STMICROELECTRONICS |
获取价格 |
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory |
![]() |