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M29W512B55K1 PDF预览

M29W512B55K1

更新时间: 2023-02-26 14:47:17
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器内存集成电路
页数 文件大小 规格书
16页 136K
描述
64KX8 FLASH 3V PROM, 55ns, PQCC32, PLASTIC, LCC-32

M29W512B55K1 技术参数

生命周期:Obsolete零件包装代码:QFJ
包装说明:PLASTIC, LCC-32针数:32
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.66
Is Samacsys:N最长访问时间:55 ns
JESD-30 代码:R-PQCC-J32长度:13.995 mm
内存密度:524288 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:32字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64KX8封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
编程电压:3 V认证状态:Not Qualified
座面最大高度:3.56 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
类型:NOR TYPE宽度:11.455 mm
Base Number Matches:1

M29W512B55K1 数据手册

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M29W512B  
512 Kbit (64Kb x8, Bulk)  
Low Voltage Single Supply Flash Memory  
PRELIMINARY DATA  
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 55ns  
PROGRAMMING TIME  
– 10µs per Byte typical  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithm  
– Embedded Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
TSOP32 (NZ)  
8 x 14mm  
PLCC32 (K)  
Figure 1. Logic Diagram  
– Manufacturer Code: 20h  
– Device Code: 27h  
V
CC  
16  
8
A0-A15  
DQ0-DQ7  
W
E
M29W512B  
G
V
SS  
AI02743  
July 1999  
1/16  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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