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M29W320ET70N1 PDF预览

M29W320ET70N1

更新时间: 2024-11-05 22:38:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存内存集成电路光电二极管
页数 文件大小 规格书
46页 887K
描述
32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

M29W320ET70N1 数据手册

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M29W320ET  
M29W320EB  
32 Mbit (4Mb x8 or 2Mb x16, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
VCC = 2.7V to 3.6V for Program, Erase  
and Read  
VPP =12V for Fast Program (optional)  
ACCESS TIMES: 70, 90ns  
PROGRAMMING TIME  
10µs per Byte/Word typical  
Double Word/ Quadruple Byte Program  
MEMORY BLOCKS  
Memory Array: 63 Main Blocks  
8 Parameter Blocks (Top or Bottom  
Location)  
TSOP48 (N)  
12 x 20mm  
ERASE SUSPEND and RESUME MODES  
Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
Faster Production/Batch Programming  
FBGA  
VPP/WP PIN for FAST PROGRAM and  
WRITE PROTECT  
TEMPORARY BLOCK UNPROTECTION  
MODE  
TFBGA48 (ZE)  
6 x 8mm  
COMMON FLASH INTERFACE  
64 bit Security Code  
EXTENDED MEMORY BLOCK  
Extra block used as security block or to  
store additional information  
LOW POWER CONSUMPTION  
Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
Manufacturer Code: 0020h  
Top Device Code M29W320ET: 2256h  
Bottom Device Code M29W320EB: 2257h  
March 2005  
1/46  

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