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M29W320ET70N6E PDF预览

M29W320ET70N6E

更新时间: 2024-11-20 15:18:11
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
65页 1335K
描述
Rev. 9

M29W320ET70N6E 数据手册

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M29W320ET  
M29W320EB  
32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block)  
3V supply Flash memory  
Features  
„ Supply voltage  
– VCC = 2.7V to 3.6V for Program, Erase and  
Read  
– VPP =12V for Fast Program (optional)  
„ Access times: 70, 90ns  
„ Programming time  
TSOP48 (N)  
12 x 20 mm  
– 10μs per byte/word typical  
– Double word/ Quadruple byte Program  
BGA  
FBGA  
„ Memory Blocks  
– Memory Array: 63 Main Blocks  
– 8 Parameter Blocks (Top or Bottom  
Location)  
TFBGA48 (ZE)  
6 x 8 mm  
FBGA64 (ZS)  
11 x 13 mm  
„ Erase Suspend and Resume modes  
– Read and Program another Block during  
Erase Suspend  
„ Unlock Bypass Program command  
– Faster Production/Batch Programming  
„ VPP/WP pin for fast Program and Write Protect  
„ Temporary Block Unprotection mode  
„ Common Flash Interface  
– 64 bit Security code  
„ Extended memory Block  
– Extra block used as security block or to  
store additional information  
„ Low power consumption  
– Standby and Automatic Standby  
„ 100,000 Program/Erase cycles per block  
„ Electronic signature  
– Manufacturer code: 0020h  
Top Device code M29W320ET: 2256h  
– Bottom Device code M29W320EB: 2257h  
„ RoHS® packages available  
May 2009  
Rev 9  
1/65  
www.numonyx.com  
1

M29W320ET70N6E 替代型号

型号 品牌 替代类型 描述 数据表
M29DW323DT70N6E MICRON

完全替代

32Mb (4Mb x8 or 2Mb x16), 3V, Dual Bank 8:24, Boot Block, Parallel NOR Flash Memory
M29W320DT70N6E MICRON

完全替代

Rev. 13
M28W320FCT70N6E MICRON

类似代替

32Mb (2Mb x16), 3V, Boot Block, Parallel NOR Flash Memory

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