Datasheet > M29W320ET70ZA1F

M29W320ET70ZA1F

更新时间： 2024-11-24 09:07:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器
页数	文件大小	规格书
46页	820K
描述
2MX16 FLASH 3V PROM, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-48

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M29W320ET70ZA1F 数据手册

M29W320ET

M29W320EB

32 Mbit (4Mb x8 or 2Mb x16, Boot Block)

3V Supply Flash Memory

FEATURES SUMMARY

■

SUPPLY VOLTAGE

Figure 1. Packages

–

= 2.7V to 3.6V for Program, Erase

and Read

–

=12V for Fast Program (optional)

■

ACCESS TIMES: 70, 90ns

PROGRAMMING TIME

–

10µs per Byte/Word typical

Double Word/ Quadruple Byte Program

■

MEMORY BLOCKS

–

Memory Array: 63 Main Blocks

8 Parameter Blocks (Top or Bottom

Location)

TSOP48 (N)

12 x 20mm

■

ERASE SUSPEND and RESUME MODES

–

Read and Program another Block during

Erase Suspend

UNLOCK BYPASS PROGRAM COMMAND

FBGA

–

Faster Production/Batch Programming

/WP PIN for FAST PROGRAM and

■

WRITE PROTECT

TEMPORARY BLOCK UNPROTECTION

MODE

TFBGA48 (ZA)

6 x 8mm

COMMON FLASH INTERFACE

–

64 bit Security Code

■

EXTENDED MEMORY BLOCK

–

Extra block used as security block or to

store additional information

LOW POWER CONSUMPTION

Standby and Automatic Standby

–

■

100,000 PROGRAM/ERASE CYCLES per

BLOCK

ELECTRONIC SIGNATURE

–

Manufacturer Code: 0020h

Top Device Code M29W320ET: 2256h

Bottom Device Code M29W320EB: 2257h

April 2004

1/46

12 3 4 5 6 7...46

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