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M29W320ET70ZE6E

更新时间： 2024-11-18 22:07:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存内存集成电路
页数	文件大小	规格书
46页	887K
描述
32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory

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中文翻译

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数据手册
替代型号

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M29W320ET70ZE6E 数据手册

M29W320ET

M29W320EB

32 Mbit (4Mb x8 or 2Mb x16, Boot Block)

3V Supply Flash Memory

FEATURES SUMMARY

■

SUPPLY VOLTAGE

Figure 1. Packages

–

V_CC= 2.7V to 3.6V for Program, Erase

and Read

–

V_PP=12V for Fast Program (optional)

■

ACCESS TIMES: 70, 90ns

PROGRAMMING TIME

–

10µs per Byte/Word typical

Double Word/ Quadruple Byte Program

■

MEMORY BLOCKS

–

Memory Array: 63 Main Blocks

8 Parameter Blocks (Top or Bottom

Location)

TSOP48 (N)

12 x 20mm

■

ERASE SUSPEND and RESUME MODES

–

Read and Program another Block during

Erase Suspend

UNLOCK BYPASS PROGRAM COMMAND

Faster Production/Batch Programming

FBGA

–

■

V_PP/WP PIN for FAST PROGRAM and

WRITE PROTECT

TEMPORARY BLOCK UNPROTECTION

MODE

TFBGA48 (ZE)

6 x 8mm

COMMON FLASH INTERFACE

–

64 bit Security Code

■

EXTENDED MEMORY BLOCK

–

Extra block used as security block or to

store additional information

LOW POWER CONSUMPTION

Standby and Automatic Standby

–

■

100,000 PROGRAM/ERASE CYCLES per

BLOCK

ELECTRONIC SIGNATURE

–

Manufacturer Code: 0020h

Top Device Code M29W320ET: 2256h

Bottom Device Code M29W320EB: 2257h

March 2005

1/46

12 3 4 5 6 7...46

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M29W320ET70ZE6E 替代型号

型号	品牌	替代类型	描述	数据表
M29W320ET70ZE6F	MICRON	功能相似	Rev. 9

与M29W320ET70ZE6E相关器件

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M29W320ET70ZE6T	NUMONYX	获取价格	32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory
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M29W320ET70ZS6F	MICRON	获取价格	Rev. 9
M29W320ET90N1	STMICROELECTRONICS	获取价格	32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory
M29W320ET90N1	NUMONYX	获取价格	32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory
M29W320ET90N1E	NUMONYX	获取价格	32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory
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