5秒后页面跳转
M29W320ET70ZE1T PDF预览

M29W320ET70ZE1T

更新时间: 2024-11-23 05:23:35
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存存储内存集成电路
页数 文件大小 规格书
63页 1191K
描述
32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

M29W320ET70ZE1T 技术参数

生命周期:Transferred零件包装代码:BGA
包装说明:6 X 8 MM, 0.80 MM PITCH, TFBGA-48针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.11
Is Samacsys:N其他特性:TOP BOOT BLOCK
备用内存宽度:8启动块:TOP
JESD-30 代码:R-PBGA-B48长度:8 mm
内存密度:33554432 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
端子数量:48字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
类型:NOR TYPE宽度:6 mm
Base Number Matches:1

M29W320ET70ZE1T 数据手册

 浏览型号M29W320ET70ZE1T的Datasheet PDF文件第2页浏览型号M29W320ET70ZE1T的Datasheet PDF文件第3页浏览型号M29W320ET70ZE1T的Datasheet PDF文件第4页浏览型号M29W320ET70ZE1T的Datasheet PDF文件第5页浏览型号M29W320ET70ZE1T的Datasheet PDF文件第6页浏览型号M29W320ET70ZE1T的Datasheet PDF文件第7页 
M29W320ET  
M29W320EB  
32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block)  
3V supply Flash memory  
Features  
Supply voltage  
– V = 2.7V to 3.6V for Program, Erase and  
CC  
Read  
– V =12V for Fast Program (optional)  
PP  
Access times: 70, 90ns  
Programming time  
– 10µs per byte/word typical  
– Double word/ Quadruple byte Program  
TSOP48 (N)  
12 x 20mm  
Memory Blocks  
– Memory Array: 63 Main Blocks  
FBGA  
– 8 Parameter Blocks (Top or Bottom  
Location)  
Erase Suspend and Resume modes  
– Read and Program another Block during  
Erase Suspend  
TFBGA48 (ZE)  
6 x 8mm  
Unlock Bypass Program command  
– Faster Production/Batch Programming  
V /WP pin for fast Program and Write Protect  
PP  
Temporary Block Unprotection mode  
Common Flash Interface  
– 64 bit Security code  
Extended memory Block  
– Extra block used as security block or to  
store additional information  
Low power consumption  
– Standby and Automatic Standby  
100,000 Program/Erase cycles per block  
Electronic signature  
– Manufacturer code: 0020h  
Top Device code M29W320ET: 2256h  
– Bottom Device code M29W320EB: 2257h  
®
ECOPACK packages available  
March 2008  
Rev 6  
1/63  
www.numonyx.com  
1

与M29W320ET70ZE1T相关器件

型号 品牌 获取价格 描述 数据表
M29W320ET70ZE6 NUMONYX

获取价格

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory
M29W320ET70ZE6 STMICROELECTRONICS

获取价格

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory
M29W320ET70ZE6E NUMONYX

获取价格

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory
M29W320ET70ZE6E STMICROELECTRONICS

获取价格

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory
M29W320ET70ZE6E MICRON

获取价格

Rev. 9
M29W320ET70ZE6F STMICROELECTRONICS

获取价格

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory
M29W320ET70ZE6F NUMONYX

获取价格

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory
M29W320ET70ZE6F MICRON

获取价格

Rev. 9
M29W320ET70ZE6T NUMONYX

获取价格

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory
M29W320ET70ZE6T STMICROELECTRONICS

获取价格

32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory