M29W320ET70N1E

更新时间： 2024-11-06 05:23:35

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存内存集成电路光电二极管
页数	文件大小	规格书
63页	1191K
描述
32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

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数据手册

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M29W320ET70N1E 数据手册

M29W320ET

M29W320EB

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block)

3V supply Flash memory

Features

■ Supply voltage

– V = 2.7V to 3.6V for Program, Erase and

Read

– V =12V for Fast Program (optional)

■ Access times: 70, 90ns

■ Programming time

– 10µs per byte/word typical

– Double word/ Quadruple byte Program

TSOP48 (N)

12 x 20mm

■ Memory Blocks

– Memory Array: 63 Main Blocks

FBGA

– 8 Parameter Blocks (Top or Bottom

Location)

■ Erase Suspend and Resume modes

– Read and Program another Block during

Erase Suspend

TFBGA48 (ZE)

6 x 8mm

■ Unlock Bypass Program command

– Faster Production/Batch Programming

■ V /WP pin for fast Program and Write Protect

■ Temporary Block Unprotection mode

■ Common Flash Interface

– 64 bit Security code

■ Extended memory Block

– Extra block used as security block or to

store additional information

■ Low power consumption

– Standby and Automatic Standby

■ 100,000 Program/Erase cycles per block

■ Electronic signature

– Manufacturer code: 0020h

– Top Device code M29W320ET: 2256h

– Bottom Device code M29W320EB: 2257h

■ ECOPACK packages available

March 2008

Rev 6

1/63

www.numonyx.com

12 3 4 5 6 7...63

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