Datasheet > M28W431-100N1TR

M28W431-100N1TR

更新时间： 2024-09-19 04:45:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器光电二极管
页数	文件大小	规格书
27页	182K
描述
512KX8 FLASH 12V PROM, 100ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40

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M28W431-100N1TR 数据手册

M28W431

4 Mbit (512Kb x8, Boot Block) Low Voltage Flash Memory

2.7V to 3.6V SUPPLY VOLTAGE

12V ± 5% PROGRAMMING VOLTAGE

FASTACCESS TIME: 100ns

PROGRAM/ERASE CONTROLLER (P/E.C.)

AUTOMATIC STATIC MODE

MEMORY ERASE in BLOCKS

– Boot Block (Top location) with hardware

write and erase protection

– Parameterand Main Blocks

100,000 PROGRAM/ERASE CYCLES

LOW POWER CONSUMPTION

20 YEARSDATARETENTION

– Defectivity below 1ppm/year

ELECTRONIC SIGNATURE

– ManufacturerCode: 20h

TSOP40 (N)

10 x 20mm

Figure 1. Logic Diagram

– Device Code: F7h

DESCRIPTION

The M28W431 Flash memory is a non-volatile

memorythatmay beerasedelectricallyat theblock

level and programmed by byte. The interface is

directly compatible with most microprocessors.

The device is offered in TSOP40 (10 x 20mm)

package.

A0-A18

DQ0-DQ7

Table 1. Signal Names

A0-A18

DQ0-DQ7

Address Inputs

M28W431

Data Input / Outputs

Chip Enable

Output Enable

Write Enable

Write Protect

Reset/Power Down/Boot Block Unlock

Program & Erase Supply Voltage

Supply Voltage

AI01714B

V_PP

V_CC

V_SS

Ground

August 1998

1/27

12 3 4 5 6 7...27

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