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M28F512-12XB3TR PDF预览

M28F512-12XB3TR

更新时间: 2024-09-20 04:46:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管
页数 文件大小 规格书
20页 148K
描述
64KX8 FLASH 12V PROM, 12ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32

M28F512-12XB3TR 数据手册

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M28F512  
512 Kbit (64Kb x8, Bulk) Flash Memory  
5V ±10% SUPPLYVOLTAGE  
12V PROGRAMMING VOLTAGE  
FASTACCESS TIME: 90ns  
BYTE PROGRAMING TIME: 10µs typical  
ELECTRICAL CHIP ERASE in 1s RANGE  
LOW POWER CONSUMPTION  
32  
– Stand-byCurrent: 5µA typical  
10,000 ERASE/PROGRAM CYCLES  
1
INTEGRATED ERASE/PROGRAM-STOP  
TIMER  
PLCC32 (C)  
PDIP32 (B)  
20 YEARSDATARETENTION  
– Defectivity below 1ppm/year  
ELECTRONIC SIGNATURE  
– ManufacturerCode: 20h  
– Device Code: 02h  
Figure 1. Logic Diagram  
DESCRIPTION  
The M28F512 Flash memory is a non-volatile  
memory that may be erased electricallyat the chip  
level and programmed by byte. It is organised as  
64 Kbytes of 8 bits. It uses a command register  
architecturetoselecttheoperatingmodesandthus  
provides a simple microprocessor interface. The  
device is offered in PDIP32 and PLCC32 pack-  
ages.  
V
V
PP  
CC  
16  
8
A0-A15  
DQ0-DQ7  
W
E
M28F512  
Table 1. Signal Names  
A0-A15  
Address Inputs  
Data Inputs / Outputs  
Chip Enable  
G
DQ0-DQ7  
E
G
Output Enable  
Write Enable  
V
SS  
AI00548B  
W
VPP  
VCC  
VSS  
Program Supply  
Supply Voltage  
Ground  
August 1998  
1/20  

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