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M28010-10RNA6 PDF预览

M28010-10RNA6

更新时间: 2024-09-16 06:58:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
23页 150K
描述
128KX8 EEPROM 3V, 100ns, PDSO32, 8 X 20 MM, TSOP-32

M28010-10RNA6 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:TSOP1, TSSOP32,.8,20
针数:32Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.91最长访问时间:100 ns
其他特性:100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS命令用户界面:NO
数据轮询:YES数据保留时间-最小值:10
JESD-30 代码:R-PDSO-G32JESD-609代码:e0
长度:18.4 mm内存密度:1048576 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP32,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE页面大小:128 words
并行/串行:PARALLEL电源:1.8/2.4 V
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.00003 A
子类别:EEPROMs最大压摆率:0.012 mA
最大供电电压 (Vsup):2.4 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
切换位:YES宽度:8 mm
Base Number Matches:1

M28010-10RNA6 数据手册

 浏览型号M28010-10RNA6的Datasheet PDF文件第2页浏览型号M28010-10RNA6的Datasheet PDF文件第3页浏览型号M28010-10RNA6的Datasheet PDF文件第4页浏览型号M28010-10RNA6的Datasheet PDF文件第5页浏览型号M28010-10RNA6的Datasheet PDF文件第6页浏览型号M28010-10RNA6的Datasheet PDF文件第7页 
M28010  
1 Mbit (128K x 8) Parallel EEPROM  
With Software Data Protection  
PRELIMINARY DATA  
Fast Access Time: 100 ns  
Single Supply Voltage:  
– 4.5 V to 5.5 V for M28010  
– 2.7 V to 3.6 V for M28010-W  
– 1.8 V to 2.4 V for M28010-R  
Low Power Consumption  
32  
Fast BYTE and PAGE WRITE (up to 128 Bytes)  
Enhanced Write Detection and Monitoring:  
– Data Polling  
1
PDIP32 (BA)  
– Toggle Bit  
– Page Load Timer Status  
JEDEC Approved Bytewide Pin-Out  
Software Data Protection  
Hardware Data Protection  
TSOP32 (NA)  
8 x 20 mm  
Software Chip Erase  
PLCC32 (KA)  
100000 Erase/Write Cycles (minimum)  
Data Retention (minimum): 10 Years  
DESCRIPTION  
The M28010 devices consist of 128Kx8 bits of low  
power, parallel EEPROM, fabricated with  
STMicroelectronics’ proprietary double polysilicon  
CMOS technology. The devices offer fast access  
time, with low power dissipation, and require a  
single voltage supply (5V, 3V or 2V, depending on  
the option chosen).  
Figure 1. Logic Diagram  
V
CC  
17  
8
A0-A16  
DQ0-DQ7  
Table 1. Signal Names  
A0-A16  
Address Input  
Data Input / Output  
Write Enable  
W
M28010  
DQ0-DQ7  
E
W
E
G
Chip Enable  
G
Output Enable  
Supply Voltage  
V
SS  
V
CC  
AI02221  
V
Ground  
SS  
February 2000  
1/23  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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