Datasheet > M28010-10WNA1T

M28010-10WNA1T

更新时间： 2024-10-31 22:08:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
23页	151K
描述
1 Mbit 128K x 8 Parallel EEPROM With Software Data Protection

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数据手册

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M28010-10WNA1T 数据手册

M28010

1 Mbit (128K x 8) Parallel EEPROM

With Software Data Protection

PRELIMINARY DATA

■ Fast Access Time: 100 ns

■ Single Supply Voltage:

– 4.5 V to 5.5 V for M28010

– 2.7 V to 3.6 V for M28010-W

– 1.8 V to 2.4 V for M28010-R

■ Low Power Consumption

■ Fast BYTE and PAGE WRITE (up to 128 Bytes)

■ Enhanced Write Detection and Monitoring:

– Data Polling

PDIP32 (BA)

– Toggle Bit

– Page Load Timer Status

■ JEDEC Approved Bytewide Pin-Out

■ Software Data Protection

■ Hardware Data Protection

TSOP32 (NA)

8 x 20 mm

■ Software Chip Erase

PLCC32 (KA)

■ 100000 Erase/Write Cycles (minimum)

■ Data Retention (minimum): 10 Years

DESCRIPTION

The M28010 devices consist of 128Kx8 bits of low

power, parallel EEPROM, fabricated with

STMicroelectronics’ proprietary double polysilicon

CMOS technology. The devices offer fast access

time, with low power dissipation, and require a

single voltage supply (5V, 3V or 2V, depending on

the option chosen).

Figure 1. Logic Diagram

A0-A16

DQ0-DQ7

Table 1. Signal Names

A0-A16

Address Input

Data Input / Output

Write Enable

M28010

DQ0-DQ7

Chip Enable

Output Enable

Supply Voltage

AI02221

Ground

February 2000

1/23

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6 7...23

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