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M28010-12NA6T PDF预览

M28010-12NA6T

更新时间: 2024-11-05 22:30:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
23页 151K
描述
1 Mbit 128K x 8 Parallel EEPROM With Software Data Protection

M28010-12NA6T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:8 X 20 MM, PLASTIC, TSOP-32
针数:32Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.91Is Samacsys:N
最长访问时间:120 ns其他特性:00.1.142
命令用户界面:NO数据轮询:YES
JESD-30 代码:R-PDSO-G32JESD-609代码:e0
长度:18.4 mm内存密度:1048576 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP32,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE页面大小:128 words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.00005 A子类别:EEPROMs
最大压摆率:0.04 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES宽度:8 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

M28010-12NA6T 数据手册

 浏览型号M28010-12NA6T的Datasheet PDF文件第2页浏览型号M28010-12NA6T的Datasheet PDF文件第3页浏览型号M28010-12NA6T的Datasheet PDF文件第4页浏览型号M28010-12NA6T的Datasheet PDF文件第5页浏览型号M28010-12NA6T的Datasheet PDF文件第6页浏览型号M28010-12NA6T的Datasheet PDF文件第7页 
M28010  
1 Mbit (128K x 8) Parallel EEPROM  
With Software Data Protection  
PRELIMINARY DATA  
Fast Access Time: 100 ns  
Single Supply Voltage:  
– 4.5 V to 5.5 V for M28010  
– 2.7 V to 3.6 V for M28010-W  
– 1.8 V to 2.4 V for M28010-R  
Low Power Consumption  
32  
Fast BYTE and PAGE WRITE (up to 128 Bytes)  
Enhanced Write Detection and Monitoring:  
– Data Polling  
1
PDIP32 (BA)  
– Toggle Bit  
– Page Load Timer Status  
JEDEC Approved Bytewide Pin-Out  
Software Data Protection  
Hardware Data Protection  
TSOP32 (NA)  
8 x 20 mm  
Software Chip Erase  
PLCC32 (KA)  
100000 Erase/Write Cycles (minimum)  
Data Retention (minimum): 10 Years  
DESCRIPTION  
The M28010 devices consist of 128Kx8 bits of low  
power, parallel EEPROM, fabricated with  
STMicroelectronics’ proprietary double polysilicon  
CMOS technology. The devices offer fast access  
time, with low power dissipation, and require a  
single voltage supply (5V, 3V or 2V, depending on  
the option chosen).  
Figure 1. Logic Diagram  
V
CC  
17  
8
A0-A16  
DQ0-DQ7  
Table 1. Signal Names  
A0-A16  
Address Input  
Data Input / Output  
Write Enable  
W
M28010  
DQ0-DQ7  
E
W
E
G
Chip Enable  
G
Output Enable  
Supply Voltage  
V
SS  
V
CC  
AI02221  
V
Ground  
SS  
February 2000  
1/23  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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