Datasheet > M27W401-80XN6TR

M27W401-80XN6TR

更新时间： 2024-11-30 22:55:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
15页	104K
描述
4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM

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数据手册

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M27W401-80XN6TR 数据手册

M27W401

4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM

■ 2.7V to 3.6V LOW VOLTAGE in READ

OPERATION

■ ACCESS TIME:

– 70ns at V = 3.0V to 3.6V

– 80ns at V = 2.7V to 3.6V

■ PIN COMPATIBLE with M27C4001

■ LOW POWER CONSUMPTION:

– 15µA max Standby Current

FDIP32W (F)

PDIP32 (B)

– 15mA max Active Current at 5MHz

■ PROGRAMMING TIME 100µs/byte

■ HIGH RELIABILITY CMOS TECHNOLOGY

– 2,000V ESD Protection

TSOP32 (N)

8 x 20 mm

PLCC32 (K)

– 200mA Latchup Protection Immunity

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

Figure 1. Logic Diagram

– Device Code: 41h

DESCRIPTION

The M27W401 is a low voltage 4 Mbit EPROM of-

fered in the two ranges UV (ultra violet erase) and

OTP (one time programmable). It is ideally suited

for microprocessor systems requiring large data or

program storage and is organised as 524,288 by 8

bits.

A0-A18

Q0-Q7

The M27W401 operates in the read mode with a

supply voltage as low as 2.7V at –40 to 85°C tem-

perature range. The decrease in operating power

allows either a reduction of the size of the battery

or an increase in the time between battery re-

charges.

M27W401

The FDIP32W (window ceramic frit-seal package)

has a transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written to the

device by following the programming procedure.

AI01590

For application where the content is programmed

only one time and erasure is not required, the

M27W401 is offered in PDIP32, PLCC32 and

TSOP32 (8 x 20 mm) packages.

March 2000

1/15

12 3 4 5 6 7...15

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