Datasheet > M27W512

M27W512

更新时间： 2024-02-29 08:18:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
16页	110K
描述
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM

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数据手册

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M27W512 数据手册

M27W512

512 Kbit (64Kb x8) Low Voltage UV EPROM and OTP EPROM

■ 2.7V to 3.6V SUPPLY VOLTAGE in READ

OPERATION

■ ACCESS TIME:

– 70ns at V = 3.0V to 3.6V

– 80ns at V = 2.7V to 3.6V

■ PIN COMPATIBLE with M27C512

■ LOW POWER CONSUMPTION:

– 15µA max Standby Current

FDIP28W (F)

PDIP28 (B)

– 15mA max Active Current at 5MHz

■ PROGRAMMING TIME 100µs/byte

■ HIGH RELIABILITY CMOS TECHNOLOGY

– 2,000V ESD Protection

– 200mA Latchup Protection Immunity

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

PLCC32 (K)

TSOP28 (N)

8 x 13.4 mm

– Device Code: 3Dh

Figure 1. Logic Diagram

DESCRIPTION

The M27W512 is a low voltage 512 Kbit EPROM

offered in the two range UV (ultra violet erase) and

OTP (one time programmable). It is ideally suited

for microprocessor systems and is organized as

65,536 by 8 bits.

The M27W512 operates in the read mode with a

supply voltage as low as 2.7V at –40 to 85°C tem-

perature range. The decrease in operating power

allows either a reduction of the size of the battery

or an increase in the time between battery re-

charges.

A0-A15

Q0-Q7

M27W512

The FDIP28W (window ceramic frit-seal package)

has transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written to the

device by following the programming procedure.

For applications where the content is programmed

only one time and erasure is not required, the

M27W512 is offered in PDIP28, PLCC32 and

TSOP28 (8 x 13.4 mm) packages.

AI01584

March 2000

1/16

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