Datasheet > M27W402-100F6TR

M27W402-100F6TR

更新时间： 2024-02-25 05:15:57

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
15页	105K
描述
4 Mbit 256Kb x16 Low Voltage UV EPROM and OTP EPROM

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数据手册

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M27W402-100F6TR 数据手册

M27W402

4 Mbit (256Kb x16) Low Voltage UV EPROM and OTP EPROM

■ 2.7V to 3.6V SUPPLY VOLTAGE in READ

OPERATION

■ ACCESS TIME:

– 80ns at V = 3.0V to 3.6V

– 100ns at V = 2.7V to 3.6V

■ PIN COMPATIBLE with M27C4002

■ LOW POWER CONSUMPTION:

– 15µA max Standby Current

FDIP40W (F)

PDIP40 (B)

– 15mA max Active Current at 5MHz

■ PROGRAMMING TIME 100µs/word

■ HIGH RELIABILITY CMOS TECHNOLOGY

– 2,000V ESD Protection

PLCC44 (K)

TSOP40 (N)

10 x 20 mm

– 200mA Latchup Protection Immunity

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

Figure 1. Logic Diagram

– Device Code: 0044h

DESCRIPTION

The M27W402 is a low voltage 4 Mbit EPROM of-

fered in the two range UV (Ultra Violet Erase) and

OTP (one time programmable). It is ideally suited

for microprocessor systems requiring large data or

program storage and is organised as 262,144 by

16 bits.

The M27W402 operates in the read mode with a

supply voltage as low as 2.7V at –40 to 85°C tem-

perature range. The decrease in operating power

allows either a reduction of the size of the battery

or an increase in the time between battery re-

charges.

The FDIP40W (window ceramic frit-seal package)

has a transparent lids which allow the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written to the

device by following the programming procedure.

A0-A17

Q0-Q15

M27W402

For applications where the content is programmed

only one time and erasure is not required, the

M27W402 is offered in PDIP40, PLCC44 and

TSOP40 (10 x 20 mm) packages.

AI01863

March 2000

1/15

12 3 4 5 6 7...15

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