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M27W402 PDF预览

M27W402

更新时间: 2024-11-30 22:55:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
15页 105K
描述
4 Mbit 256Kb x16 Low Voltage UV EPROM and OTP EPROM

M27W402 数据手册

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M27W402  
4 Mbit (256Kb x16) Low Voltage UV EPROM and OTP EPROM  
2.7V to 3.6V SUPPLY VOLTAGE in READ  
OPERATION  
ACCESS TIME:  
– 80ns at V = 3.0V to 3.6V  
CC  
40  
40  
– 100ns at V = 2.7V to 3.6V  
CC  
1
1
PIN COMPATIBLE with M27C4002  
LOW POWER CONSUMPTION:  
– 15µA max Standby Current  
FDIP40W (F)  
PDIP40 (B)  
– 15mA max Active Current at 5MHz  
PROGRAMMING TIME 100µs/word  
HIGH RELIABILITY CMOS TECHNOLOGY  
– 2,000V ESD Protection  
PLCC44 (K)  
TSOP40 (N)  
10 x 20 mm  
– 200mA Latchup Protection Immunity  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
Figure 1. Logic Diagram  
– Device Code: 0044h  
DESCRIPTION  
The M27W402 is a low voltage 4 Mbit EPROM of-  
fered in the two range UV (Ultra Violet Erase) and  
OTP (one time programmable). It is ideally suited  
for microprocessor systems requiring large data or  
program storage and is organised as 262,144 by  
16 bits.  
V
V
CC  
PP  
18  
16  
The M27W402 operates in the read mode with a  
supply voltage as low as 2.7V at –40 to 85°C tem-  
perature range. The decrease in operating power  
allows either a reduction of the size of the battery  
or an increase in the time between battery re-  
charges.  
The FDIP40W (window ceramic frit-seal package)  
has a transparent lids which allow the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written to the  
device by following the programming procedure.  
A0-A17  
Q0-Q15  
E
M27W402  
G
For applications where the content is programmed  
only one time and erasure is not required, the  
M27W402 is offered in PDIP40, PLCC44 and  
TSOP40 (10 x 20 mm) packages.  
V
SS  
AI01863  
March 2000  
1/15  

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