Datasheet > M27V402-180N4TR

M27V402-180N4TR

更新时间： 2024-10-27 22:29:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
13页	122K
描述
4 Mbit 512Kb x 8 Low Voltage OTP EPROM

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中文翻译

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数据手册

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M27V402-180N4TR 数据手册

M27V405

4 Mbit (512Kb x 8) Low Voltage OTP EPROM

■ LOW VOLTAGE READ OPERATION:

3V to 3.6V

■ FAST ACCESS TIME: 120ns

■ LOW POWER CONSUMPTION:

– Active Current 15mA at 5MHz

– Standby Current 20µA

■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

■ PROGRAMMING TIMES:

PLCC32 (K)

TSOP32 (N)

8 x 20 mm

– Typical 48sec. (PRESTO II Algorithm)

– Typical 27sec. (On-Board Programming)

■ PIN COMPATIBLE with the 4 Mbit,

Single Voltage Flash Memory

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: B4

Figure 1. Logic Diagram

DESCRIPTION

The M27V405 is a low voltage 4 Mbit EPROM of-

fered in the OTP range (one time programmable).

It is ideally suited for microprocessor systems re-

quiring large data or program storage and is orga-

nised as 524,288 by 8 bits.

The M27V405 operates in the read mode with a

supply voltage as low as 3V. The decrease in op-

erating power allows either a reduction of the size

of the battery or an increase in the time between

battery recharges.

A0-A18

Q0-Q7

M27V405

Table 1. Signal Names

A0-A18

Q0-Q7

Address Inputs

Data Outputs

Chip Enable

Output Enable

Program Supply

Supply Voltage

Ground

AI01800

May 1998

1/13

12 3 4 5 6 7...13

中文翻译

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