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M27V402-200F5TR PDF预览

M27V402-200F5TR

更新时间: 2024-10-27 22:31:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
15页 103K
描述
4 Mbit 256Kb x 16 Low Voltage UV EPROM and OTP EPROM

M27V402-200F5TR 数据手册

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M27V402  
4 Mbit (256Kb x 16) Low Voltage UV EPROM and OTP EPROM  
LOW VOLTAGE READ OPERATION:  
3V to 3.6V  
FAST ACCESS TIME: 120ns  
LOW POWER CONSUMPTION:  
– Active Current 15mA at 5MHz  
40  
40  
– Standby Current 20µA  
1
1
PROGRAMMING VOLTAGE: 12.75V ± 0.25V  
FDIP40W (F)  
PDIP40 (B)  
PROGRAMMING TIME: 100µs/byte (typical)  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: 8Dh  
DESCRIPTION  
The M27V402 is a low voltage, low power 4 Mbit  
UV erasable and electrically programmable  
EPROM, ideally suited for handheld and portable  
microprocessor systems requiring large programs.  
It is organized as 262,144 by 16 bits.  
PLCC44 (K)  
TSOP40 (N)  
10 x 20 mm  
Figure 1. Logic Diagram  
The M27V402 operates in the read mode with a  
supply voltage as low as 3V. The decrease in op-  
erating power allows either a reduction of the size  
of the battery or an increase in the time between  
battery recharges.  
V
V
PP  
CC  
The FDIP40W (window ceramic frit-seal package)  
has a transparent lid which allows the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written to the  
device by following the programming procedure.  
18  
16  
A0-A17  
Q0-Q15  
E
Table 1. Signal Names  
M27V402  
A0-A17  
Address Inputs  
Data Outputs  
Chip Enable  
Output Enable  
Program Supply  
Supply Voltage  
Ground  
G
Q0-Q15  
E
G
V
SS  
V
PP  
AI01819  
V
V
CC  
SS  
May 1998  
1/15  

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