Datasheet > M27V402-200K1TR

M27V402-200K1TR

更新时间： 2024-10-27 22:55:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
15页	103K
描述
4 Mbit 256Kb x 16 Low Voltage UV EPROM and OTP EPROM

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M27V402-200K1TR 数据手册

M27V402

4 Mbit (256Kb x 16) Low Voltage UV EPROM and OTP EPROM

■ LOW VOLTAGE READ OPERATION:

3V to 3.6V

■ FAST ACCESS TIME: 120ns

■ LOW POWER CONSUMPTION:

– Active Current 15mA at 5MHz

– Standby Current 20µA

■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

FDIP40W (F)

PDIP40 (B)

■ PROGRAMMING TIME: 100µs/byte (typical)

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 8Dh

DESCRIPTION

The M27V402 is a low voltage, low power 4 Mbit

UV erasable and electrically programmable

EPROM, ideally suited for handheld and portable

microprocessor systems requiring large programs.

It is organized as 262,144 by 16 bits.

PLCC44 (K)

TSOP40 (N)

10 x 20 mm

Figure 1. Logic Diagram

The M27V402 operates in the read mode with a

supply voltage as low as 3V. The decrease in op-

erating power allows either a reduction of the size

of the battery or an increase in the time between

battery recharges.

The FDIP40W (window ceramic frit-seal package)

has a transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written to the

device by following the programming procedure.

A0-A17

Q0-Q15

Table 1. Signal Names

M27V402

A0-A17

Address Inputs

Data Outputs

Chip Enable

Output Enable

Program Supply

Supply Voltage

Ground

Q0-Q15

AI01819

May 1998

1/15

12 3 4 5 6 7...15

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