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M27V402-180N6TR PDF预览

M27V402-180N6TR

更新时间: 2024-10-27 22:55:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
13页 122K
描述
4 Mbit 512Kb x 8 Low Voltage OTP EPROM

M27V402-180N6TR 数据手册

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M27V405  
4 Mbit (512Kb x 8) Low Voltage OTP EPROM  
LOW VOLTAGE READ OPERATION:  
3V to 3.6V  
FAST ACCESS TIME: 120ns  
LOW POWER CONSUMPTION:  
– Active Current 15mA at 5MHz  
– Standby Current 20µA  
PROGRAMMING VOLTAGE: 12.75V ± 0.25V  
PROGRAMMING TIMES:  
PLCC32 (K)  
TSOP32 (N)  
8 x 20 mm  
– Typical 48sec. (PRESTO II Algorithm)  
– Typical 27sec. (On-Board Programming)  
PIN COMPATIBLE with the 4 Mbit,  
Single Voltage Flash Memory  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: B4  
Figure 1. Logic Diagram  
DESCRIPTION  
The M27V405 is a low voltage 4 Mbit EPROM of-  
fered in the OTP range (one time programmable).  
It is ideally suited for microprocessor systems re-  
quiring large data or program storage and is orga-  
nised as 524,288 by 8 bits.  
V
V
PP  
CC  
The M27V405 operates in the read mode with a  
supply voltage as low as 3V. The decrease in op-  
erating power allows either a reduction of the size  
of the battery or an increase in the time between  
battery recharges.  
19  
8
A0-A18  
Q0-Q7  
E
M27V405  
Table 1. Signal Names  
G
A0-A18  
Q0-Q7  
E
Address Inputs  
Data Outputs  
Chip Enable  
Output Enable  
Program Supply  
Supply Voltage  
Ground  
V
SS  
G
AI01800  
V
PP  
V
CC  
V
SS  
May 1998  
1/13  

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