是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | LCC | 包装说明: | QCCJ, LDCC44,.7SQ |
针数: | 44 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.71 |
风险等级: | 5.92 | 最长访问时间: | 200 ns |
I/O 类型: | COMMON | JESD-30 代码: | S-PQCC-J44 |
JESD-609代码: | e0 | 长度: | 16.5862 mm |
内存密度: | 1048576 bit | 内存集成电路类型: | OTP ROM |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 44 | 字数: | 65536 words |
字数代码: | 64000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 64KX16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | QCCJ |
封装等效代码: | LDCC44,.7SQ | 封装形状: | SQUARE |
封装形式: | CHIP CARRIER | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 3.3 V |
认证状态: | Not Qualified | 座面最大高度: | 4.7 mm |
最大待机电流: | 0.00002 A | 子类别: | OTP ROMs |
最大压摆率: | 0.015 mA | 最大供电电压 (Vsup): | 3.63 V |
最小供电电压 (Vsup): | 2.97 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | J BEND | 端子节距: | 1.27 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 16.5862 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M27V102-200N1 | STMICROELECTRONICS |
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64KX16 OTPROM, 200ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40 | |
M27V102-200N1TR | STMICROELECTRONICS |
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1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM | |
M27V102-200N6TR | STMICROELECTRONICS |
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1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM | |
M27V102-90B1TR | STMICROELECTRONICS |
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1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM | |
M27V102-90B6TR | STMICROELECTRONICS |
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1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM | |
M27V102-90BN1 | STMICROELECTRONICS |
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64KX16 OTPROM, 90ns, PDIP28, PLASTIC, DIP-28 | |
M27V102-90BN6 | STMICROELECTRONICS |
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64KX16 OTPROM, 90ns, PDIP28, PLASTIC, DIP-28 | |
M27V102-90F1TR | STMICROELECTRONICS |
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1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM | |
M27V102-90F6TR | STMICROELECTRONICS |
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1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM | |
M27V102-90K1TR | STMICROELECTRONICS |
获取价格 |
1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM |