Datasheet > M27V102-90B6TR

M27V102-90B6TR

更新时间： 2024-10-26 22:55:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
15页	117K
描述
1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM

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数据手册

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M27V102-90B6TR 数据手册

M27V102

1 Mbit (64Kb x 16) Low Voltage UV EPROM and OTP EPROM

LOW VOLTAGEREAD OPERATION:

3V to 3.6V

FASTACCESS TIME: 90ns

LOW POWER CONSUMPTION:

– Active Current 15mAat 5MHz

– StandbyCurrent 20µA

PROGRAMMING VOLTAGE: 12.75V ± 0.25V

PROGRAMMING TIME: 100µs/byte (typical)

ELECTRONIC SIGNATURE

FDIP40W (F)

PDIP40 (B)

– ManufacturerCode: 0020h

– Device Code: 008Ch

DESCRIPTION

The M27W102 is a low voltage 1 Mbit EPROM

offeredin thetworangesUV (ultravioleterase)and

OTP (one time programmable). It is ideally suited

for microprocessorsystems requiring large data or

programstorageand is organizedas65,536words

by 16 bits.

PLCC44 (K)

TSOP40 (N)

10 x 14mm

Figure 1. Logic Diagram

The M27V102 operates in the read mode with a

supply voltage as low as 3V. The decrease in

operating power allows either a reduction of the

size of the battery or an increase in the time be-

tween battery recharges.

The FDIP40W (window ceramic frit-seal package)

has a transparent lid which allows the user to

expose the chip to ultraviolet light to erase the bit

pattern. A new pattern can then be written to the

device by following the programming procedure.

A0-A15

Q0-Q15

Table 1. Signal Names

M27V102

A0 - A15

Address Inputs

Data Outputs

Chip Enable

Output Enable

Program

Q0 - Q15

V_PP

V_CC

V_SS

Program Supply

Supply Voltage

Ground

AI01912

May 1998

1/15

12 3 4 5 6 7...15

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