Datasheet > M27V102-90BN6

M27V102-90BN6

更新时间： 2024-10-28 05:00:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器光电二极管
页数	文件大小	规格书
15页	105K
描述
64KX16 OTPROM, 90ns, PDIP28, PLASTIC, DIP-28

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数据手册

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M27V102-90BN6 数据手册

M27V102

1 Mbit (64Kb x16) Low Voltage UV EPROM and OTP EPROM

NOT FOR NEW DESIGN

■ M27V102 is replaced by the M27W102

■ LOW VOLTAGE READ OPERATION:

3V to 3.6V

■ ACCESS TIME: 90ns

■ LOW POWER CONSUMPTION:

– Active Current 15mA at 5MHz

– Standby Current 20µA

FDIP40W (F)

PDIP40 (B)

■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

■ PROGRAMMING TIME: 100µs/word

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 8Ch

PLCC44 (K)

TSOP40 (N)

8 x 20 mm

DESCRIPTION

The M27V102 is a low voltage 1 Mbit EPROM of-

fered in the two ranges UV (ultra violet erase) and

OTP (one time programmable). It is ideally suited

for microprocessor systems requiring large data or

program storage and is organized as 65,536

words by 16 bits.

Figure 1. Logic Diagram

The M27V102 operates in the read mode with a

supply voltage as low as 3V. The decrease in op-

erating power allows either a reduction of the size

of the battery or an increase in the time between

battery recharges.

The FDIP40W (window ceramic frit-seal package)

has a transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written to the

device by following the programming procedure.

A0-A15

Q0-Q15

For application where the content is programmed

only one time and erasure is not required, the

M27V102 is offered in PDIP40, PLCC32 and

TSOP40 (10 x 14 mm) packages.

M27V102

AI01912

July 2000

1/15

This is information on a product still in production but not recommended for new designs.

12 3 4 5 6 7...15

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