是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TSOP | 包装说明: | 10 X 14 MM, PLASTIC, TSOP-40 |
针数: | 40 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.71 |
风险等级: | 5.92 | 最长访问时间: | 200 ns |
I/O 类型: | COMMON | JESD-30 代码: | R-PDSO-G40 |
JESD-609代码: | e0 | 长度: | 12.4 mm |
内存密度: | 1048576 bit | 内存集成电路类型: | OTP ROM |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 40 | 字数: | 65536 words |
字数代码: | 64000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 64KX16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSOP1 |
封装等效代码: | TSSOP40,.56,20 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 并行/串行: | PARALLEL |
电源: | 3.3 V | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 最大待机电流: | 0.00002 A |
子类别: | OTP ROMs | 最大压摆率: | 0.015 mA |
最大供电电压 (Vsup): | 3.63 V | 最小供电电压 (Vsup): | 2.97 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子节距: | 0.5 mm | 端子位置: | DUAL |
宽度: | 10 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M27V102-200N1TR | STMICROELECTRONICS |
获取价格 |
1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM | |
M27V102-200N6TR | STMICROELECTRONICS |
获取价格 |
1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM | |
M27V102-90B1TR | STMICROELECTRONICS |
获取价格 |
1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM | |
M27V102-90B6TR | STMICROELECTRONICS |
获取价格 |
1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM | |
M27V102-90BN1 | STMICROELECTRONICS |
获取价格 |
64KX16 OTPROM, 90ns, PDIP28, PLASTIC, DIP-28 | |
M27V102-90BN6 | STMICROELECTRONICS |
获取价格 |
64KX16 OTPROM, 90ns, PDIP28, PLASTIC, DIP-28 | |
M27V102-90F1TR | STMICROELECTRONICS |
获取价格 |
1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM | |
M27V102-90F6TR | STMICROELECTRONICS |
获取价格 |
1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM | |
M27V102-90K1TR | STMICROELECTRONICS |
获取价格 |
1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM | |
M27V102-90K6TR | STMICROELECTRONICS |
获取价格 |
1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM |