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M27V102-200F6TR PDF预览

M27V102-200F6TR

更新时间: 2024-10-26 22:37:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
15页 117K
描述
1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM

M27V102-200F6TR 数据手册

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M27V102  
1 Mbit (64Kb x 16) Low Voltage UV EPROM and OTP EPROM  
LOW VOLTAGEREAD OPERATION:  
3V to 3.6V  
FASTACCESS TIME: 90ns  
LOW POWER CONSUMPTION:  
40  
40  
– Active Current 15mAat 5MHz  
– StandbyCurrent 20µA  
1
1
PROGRAMMING VOLTAGE: 12.75V ± 0.25V  
PROGRAMMING TIME: 100µs/byte (typical)  
ELECTRONIC SIGNATURE  
FDIP40W (F)  
PDIP40 (B)  
– ManufacturerCode: 0020h  
– Device Code: 008Ch  
DESCRIPTION  
The M27W102 is a low voltage 1 Mbit EPROM  
offeredin thetworangesUV (ultravioleterase)and  
OTP (one time programmable). It is ideally suited  
for microprocessorsystems requiring large data or  
programstorageand is organizedas65,536words  
by 16 bits.  
PLCC44 (K)  
TSOP40 (N)  
10 x 14mm  
Figure 1. Logic Diagram  
The M27V102 operates in the read mode with a  
supply voltage as low as 3V. The decrease in  
operating power allows either a reduction of the  
size of the battery or an increase in the time be-  
tween battery recharges.  
The FDIP40W (window ceramic frit-seal package)  
has a transparent lid which allows the user to  
expose the chip to ultraviolet light to erase the bit  
pattern. A new pattern can then be written to the  
device by following the programming procedure.  
V
V
PP  
CC  
16  
16  
A0-A15  
Q0-Q15  
Table 1. Signal Names  
P
E
M27V102  
A0 - A15  
Address Inputs  
Data Outputs  
Chip Enable  
Output Enable  
Program  
Q0 - Q15  
G
E
G
P
V
SS  
VPP  
VCC  
VSS  
Program Supply  
Supply Voltage  
Ground  
AI01912  
May 1998  
1/15  

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